TY - JOUR
T1 - Toward ultimate efficiency
T2 - Progress and prospects on planar and 3D nanostructured nonpolar and semipolar InGaN light-emitting diodes
AU - Zhao, Yuji
AU - Fu, Houqiang
AU - Wang, George T.
AU - Nakamura, Shuji
N1 - Publisher Copyright:
© 2018 Optical Society of America.
PY - 2018/3/31
Y1 - 2018/3/31
N2 - Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have been extensively investigated as potential replacements for current polar c-plane LEDs. High-power and low-efficiency-droop blue LEDs have been demonstrated on nonpolar and semipolar planes III-nitride due to the advantages of eliminated or reduced polarization-related electric field and homoepitaxial growth. Semipolar (2021) and (2021) LEDs have contributed to bridging “green gap” (low efficiency in green spectral region) by incorporating high indium compositions, reducing polarization effects, and suppressing defects. Other properties, such as low thermal droop, narrow spectral linewidth, small wavelength shift, and polarized emission, have also been reported for nonpolar and semipolar LEDs. In this paper we review the theoretical background, device performance, material properties, and physical mechanisms for nonpolar and semipolar III-nitride semiconductors and associated blue and green LEDs. The latest progress on topics including efficiency droop, thermal droop, green-gap, and three-dimensional nanostructures is detailed. Future challenges, potential solutions, and applications will also be covered.
AB - Nonpolar and semipolar III-nitride-based blue and green light-emitting diodes (LEDs) have been extensively investigated as potential replacements for current polar c-plane LEDs. High-power and low-efficiency-droop blue LEDs have been demonstrated on nonpolar and semipolar planes III-nitride due to the advantages of eliminated or reduced polarization-related electric field and homoepitaxial growth. Semipolar (2021) and (2021) LEDs have contributed to bridging “green gap” (low efficiency in green spectral region) by incorporating high indium compositions, reducing polarization effects, and suppressing defects. Other properties, such as low thermal droop, narrow spectral linewidth, small wavelength shift, and polarized emission, have also been reported for nonpolar and semipolar LEDs. In this paper we review the theoretical background, device performance, material properties, and physical mechanisms for nonpolar and semipolar III-nitride semiconductors and associated blue and green LEDs. The latest progress on topics including efficiency droop, thermal droop, green-gap, and three-dimensional nanostructures is detailed. Future challenges, potential solutions, and applications will also be covered.
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U2 - 10.1364/AOP.10.000246
DO - 10.1364/AOP.10.000246
M3 - Review article
AN - SCOPUS:85047256598
SN - 1943-8206
VL - 10
SP - 246
EP - 308
JO - Advances in Optics and Photonics
JF - Advances in Optics and Photonics
IS - 1
ER -