Total-ionizing-dose effects on isolation oxides in modern CMOS technologies

Hugh Barnaby, Michael Mclain, Ivan Sanchez Esqueda

Research output: Contribution to journalArticlepeer-review

43 Scopus citations


This paper presents experimental data on the total dose response of deep sub-micron bulk CMOS devices and integrated circuits. Ionizing radiation experiments on shallow trench isolation (STI) field oxide MOS capacitors (FOXCAP) indicate a characteristic build-up of radiation-induced defects in the dielectric. In this paper, capacitors fabricated with STI, thermal, SIMOX and bipolar base oxides of similar thickness are compared and show the STI oxide to be most susceptible to radiation effects. Experimental data on irradiated shift registers and n-channel MOSFETs are also presented. These data indicate that radiation damage to the STI can increase the off-state current of n-channel devices and the standby current of CMOS integrated circuits.

Original languageEnglish (US)
Pages (from-to)1142-1145
Number of pages4
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Issue number1-2 SPEC. ISS.
StatePublished - Aug 2007


  • Interface traps
  • MOS capacitors
  • Oxide trapped charge
  • Radiation
  • Shallow trench isolation
  • Shift registers
  • Total ionizing dose
  • n-Channel MOSFETs

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation


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