Total ionizing dose effects in shallow trench isolation oxides

Physics & Astronomy

• isolation 95%
• dosage 66%
• oxides 62%
• traps 62%
• circuit reliability 31%
• leakage 27%
• borders 18%
• transconductance 18%
• polarity 15%
• pumping 14%
• transistors 13%
• field effect transistors 13%
• defects 9%
• radiation 9%
• silicon 8%
• temperature 4%

Chemical Compounds

• Interface Trap 100%
• Dose 77%
• Oxide 54%
• Charge Pumping 41%
• Transconductance 30%
• Leakage Current 26%
• Field Effect 19%
• Polarity 16%

Engineering & Materials Science

• Oxides 86%
• Transconductance 20%
• Leakage currents 17%
• Field effect transistors 17%
• Transistors 14%
• Radiation 13%
• Silicon 13%
• Substrates 11%
• Defects 11%
• Networks (circuits) 9%
• Temperature 6%