TY - JOUR
T1 - Total-ionizing-dose effects in modern CMOS technologies
AU - Barnaby, Hugh
N1 - Funding Information:
Manuscript received December 13, 2005. This work was supported in part by the U.S. Defense Advanced Research Projects Agency (Radiation Hardened by Design Program) and the Air Force Multidisciplinary Research Program of the University Research Initiative (AFMURI). The author is with the Arizona State University, Tempe, AZ 85287-5706 USA (e-mail: hbarnaby@asu.edu). Color versions of one or more figures are available online at http://ieeexplore. ieee.org Digital Object Identifier 10.1109/TNS.2006.885952
PY - 2006/12
Y1 - 2006/12
N2 - This review paper discusses several key issues associated with deep submicron CMOS devices as well as advanced semiconductor materials in ionizing radiation environments. There are, as outlined in the ITRS roadmap, numerous challenges ahead for commercial industry in its effort to track Moore's Law down to the 45 nm node and beyond. While many of the classical threats posed by ionizing radiation exposure have diminished by aggressive semiconductor scaling, the question remains whether there may be unknown, potentially worse threats lurking in the deep submicron regime. This manuscript provides a basic overview of some of the materials, devices, and designs that are being explored or, in some cases, used today. An overview of radiation threats and how radiation effects can be characterized is also presented. Last, the paper provides a detailed discussion of what we know now about how modern devices and materials respond to radiation and how we may assess, through the use of advanced analysis and modeling techniques, the relative hardness of future technologies.
AB - This review paper discusses several key issues associated with deep submicron CMOS devices as well as advanced semiconductor materials in ionizing radiation environments. There are, as outlined in the ITRS roadmap, numerous challenges ahead for commercial industry in its effort to track Moore's Law down to the 45 nm node and beyond. While many of the classical threats posed by ionizing radiation exposure have diminished by aggressive semiconductor scaling, the question remains whether there may be unknown, potentially worse threats lurking in the deep submicron regime. This manuscript provides a basic overview of some of the materials, devices, and designs that are being explored or, in some cases, used today. An overview of radiation threats and how radiation effects can be characterized is also presented. Last, the paper provides a detailed discussion of what we know now about how modern devices and materials respond to radiation and how we may assess, through the use of advanced analysis and modeling techniques, the relative hardness of future technologies.
KW - 1/f noise
KW - High-k
KW - Interface traps
KW - Oxide trapped charge
KW - RILC
KW - Radiation
KW - Shallow trench isolation
KW - Silicon-on-insulation (SOI)
KW - Total ionizing dose
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U2 - 10.1109/TNS.2006.885952
DO - 10.1109/TNS.2006.885952
M3 - Article
AN - SCOPUS:33846289564
SN - 0018-9499
VL - 53
SP - 3103
EP - 3121
JO - IEEE Transactions on Nuclear Science
JF - IEEE Transactions on Nuclear Science
IS - 6
ER -