Topological signatures of medium range order in amorphous semiconductor models

Michael Treacy, P. M. Voyles, J. M. Gibson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

3 Scopus citations


The crystalline regions in the models of disordered tetrahedral semiconductors were detected through topological local cluster concept of Marians and Hobbs. Simple algorithms were presented to detect both Wells-type shortest circuits and O'Keefe-type rings which was used to delineate alternative forms of the Schlafli cluster in models. Identical Schlafli clusters were yielded for both polycrystalline topologies which were cubic and hexagonal diamond like frameworks.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsR.W. Collins, H.M. Branz, M. Stutzmann, S. Guha, H. Okamoto
StatePublished - 2000
Externally publishedYes
EventAmorphous and Heterogeneus Silicon Thin Films-2000 - San Francisco, CA, United States
Duration: Apr 24 2000Apr 28 2000


OtherAmorphous and Heterogeneus Silicon Thin Films-2000
Country/TerritoryUnited States
CitySan Francisco, CA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


Dive into the research topics of 'Topological signatures of medium range order in amorphous semiconductor models'. Together they form a unique fingerprint.

Cite this