Abstract
The effect of Si 1-xGe x alloy composition on the titanium germanosilicide phase formation sequence during the Ti-Si 1-xGe x solid phase reaction was examined. For the Ti-Si reaction the initial formation of C49 TiSi 2 is followed, at higher temperatures, by the formation of C54 TiSi 2. For the Ti-Ge reaction the initial formation of Ti 6Ge 5 is followed, at higher temperatures, by the formation of C54 TiGe 2. It was determined that the Ti-Si 1-xGe x reaction follows three different reaction paths depending on the composition of the initial Si 1-xGe x alloy. For Si rich Si 1-xGe x alloys the Ti-Si 1-xGe x reaction follows a 'Ti-Si like' reaction path (Ti+M → C49 TiM 2 → C54 TiM 2, where M = Si 1-xGe x). For Ge rich Si 1-xGe x alloys the reaction follows a 'Ti-Ge like' reaction path (Ti+M → Ti 6M 5 → C54 TiM 2). Both Ti 6M 5 and C49 TiM 2 form during the reaction of titanium with Si 1-xGe x alloys in an intermediate composition range. Properties of the final C54 phase were observed to be strongly dependent on the phase formation sequence. Smooth continuous C54 titanium germanosilicide forms during the 'Ti-Si like' reaction and discontinuous islanded C54 titanium germanosilicide forms during the 'Ti-Ge like' reaction. An optimum Si 1-xGe x alloy composition range of 0.00 ≤ x ≤ 0.36 was determined for the formation of continuous-low-resistivity- C54 titanium germanosilicide films from the solid phase reaction of Ti and Si 1-xGe x alloy.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 405-410 |
Number of pages | 6 |
Volume | 402 |
State | Published - 1996 |
Externally published | Yes |
Event | Proceedings of the 1995 MRS Fall Symposium - Boston, MA, USA Duration: Nov 27 1995 → Nov 30 1995 |
Other
Other | Proceedings of the 1995 MRS Fall Symposium |
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City | Boston, MA, USA |
Period | 11/27/95 → 11/30/95 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials