Abstract
Recent experiments and calculations have shown that weak repulsive interactions between adsorbate atoms may shift nucleation kinetics from the well-known diffusion limit towards the attachment-limited case. The distinctions between diffusion- and attachment-limited kinetics are clarified, and the increased importance of the transient nucleation regime in the latter case is shown to be due to a combination of delayed nucleation and reduced capture, A time-dependent interpolation scheme between attachment- and diffusion-limited capture numbers is proposed, and tested against KMC simulations. Using this scheme to interpret recent STM results on Cu/Cu(111), bounds on the maximum adatom-adatom potential repulsive energy of 12±2 meV are deduced. Time-dependent effects also occur in the growth and ripening of strained Ge islands on Si(001), and the similarities and differences between these two systems are discussed.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Editors | M.J. Aziz, N.C. Bartelt, I. Berbezier, J.B. Hannon, S.J. Hearne |
Pages | 17-22 |
Number of pages | 6 |
Volume | 749 |
State | Published - 2002 |
Event | Morphological and Compositional Evolution of Thin Films - Boston, MA, United States Duration: Dec 2 2002 → Dec 5 2002 |
Other
Other | Morphological and Compositional Evolution of Thin Films |
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Country/Territory | United States |
City | Boston, MA |
Period | 12/2/02 → 12/5/02 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials