Time-Dependent Capture Numbers with Repulsive Pair Interactions: Cu/Cu(111) and Ge/Si(001)

J. A. Venables, H. Brune, Jeffery Drucker

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Scopus citations


Recent experiments and calculations have shown that weak repulsive interactions between adsorbate atoms may shift nucleation kinetics from the well-known diffusion limit towards the attachment-limited case. The distinctions between diffusion- and attachment-limited kinetics are clarified, and the increased importance of the transient nucleation regime in the latter case is shown to be due to a combination of delayed nucleation and reduced capture, A time-dependent interpolation scheme between attachment- and diffusion-limited capture numbers is proposed, and tested against KMC simulations. Using this scheme to interpret recent STM results on Cu/Cu(111), bounds on the maximum adatom-adatom potential repulsive energy of 12±2 meV are deduced. Time-dependent effects also occur in the growth and ripening of strained Ge islands on Si(001), and the similarities and differences between these two systems are discussed.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsM.J. Aziz, N.C. Bartelt, I. Berbezier, J.B. Hannon, S.J. Hearne
Number of pages6
StatePublished - 2002
EventMorphological and Compositional Evolution of Thin Films - Boston, MA, United States
Duration: Dec 2 2002Dec 5 2002


OtherMorphological and Compositional Evolution of Thin Films
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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