TID Response of an Analog In-Memory Neural Network Accelerator

B. Tolleson, C. Bennett, T. Patrick Xiao, D. Wilson, J. Short, J. Kim, D. R. Hughart, N. Gilbert, S. Agarwal, H. J. Barnaby, M. J. Marinella

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

A vector-matrix multiply (VMM) characterization chip was designed and fabricated in 350nm CMOS, including pulsers and a 10-bit analog to digital converter. The response of total ionizing dose (TID) was assessed using gamma radiation from a Cobalt-60 source. Inference was performed in situ during irradiation and VMMs computed by the accelerator were measured at increasing TID levels. Experimental results were used to create a circuit model, which was enabled a neural network accuracy simulation with CrossSim. Accuracy degradation on the CIFAR-10 task was a function of network architecture and was significantly reduced following >150 krad exposure.

Original languageEnglish (US)
Title of host publication2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781665456722
DOIs
StatePublished - 2023
Event61st IEEE International Reliability Physics Symposium, IRPS 2023 - Monterey, United States
Duration: Mar 26 2023Mar 30 2023

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
Volume2023-March
ISSN (Print)1541-7026

Conference

Conference61st IEEE International Reliability Physics Symposium, IRPS 2023
Country/TerritoryUnited States
CityMonterey
Period3/26/233/30/23

ASJC Scopus subject areas

  • General Engineering

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