TY - GEN
T1 - Three-dimensional topography simulation based on a level set method [deposition and etching processes]
AU - Sheikholeslami, A.
AU - Heitzinger, C.
AU - Badrieh, F.
AU - Puchner, H.
AU - Selberherr, S.
PY - 2004/1/1
Y1 - 2004/1/1
N2 - We present a general 3D topography simulator for the simulation of deposition and etching processes. The simulator is called ELSA (enhanced level set applications). ELSA is based on a level set method including narrow banding and a fast marching method. Modules for the transport of species, for surface reaction, and for the level set method are its basis.
AB - We present a general 3D topography simulator for the simulation of deposition and etching processes. The simulator is called ELSA (enhanced level set applications). ELSA is based on a level set method including narrow banding and a fast marching method. Modules for the transport of species, for surface reaction, and for the level set method are its basis.
UR - http://www.scopus.com/inward/record.url?scp=84898486759&partnerID=8YFLogxK
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U2 - 10.1109/ISSE.2004.1490431
DO - 10.1109/ISSE.2004.1490431
M3 - Conference contribution
AN - SCOPUS:84898486759
T3 - Proceedings of the International Spring Seminar on Electronics Technology
SP - 263
EP - 265
BT - 27th International Spring Seminar on Electronics Technology
PB - IEEE Computer Society
T2 - 27th International Spring Seminar on Electronics Technology, ISSE 2004
Y2 - 13 May 2004 through 16 May 2004
ER -