Abstract
Cobalt disilicide films have been formed on strained epitaxial Si 0.80Ge 0.20/Si(100) alloys via co-deposition of silicon and cobalt. Co-deposition is shown to improve the epitaxy and prevent the phase segregation commonly observed with the formation of Co/SiGe contacts using other methods such as the direct deposition of cobalt onto SiGe or the sequential, deposition of a silicon sacrificial layer and cobalt onto SiGe. EXAFS measurements at the cobalt K edge indicate that co-deposited films annealed at 500-700 °C are indeed crystalline CoSi 2 throughout this temperature range. The XRD patterns of the co-deposited films do not exhibit any of the COSi 2 (111), (220) or (311) peaks normally associated with other preparation methods. The sheet resistance and r.m.s. roughness of the CoSi 2 films increase monotonically with annealing temperature. These results indicate that co-deposited films are epitaxial to the (100)-oriented SiGe substrate and suggest that low thermal budget, low resistivity contacts to strained SiGe can be grown with this method. Issues related to the presence of Ge at the CoSi 2substrate interface will be discussed.
Original language | English (US) |
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Title of host publication | Materials Research Society Symposium - Proceedings |
Publisher | Materials Research Society |
Pages | 365-370 |
Number of pages | 6 |
Volume | 448 |
State | Published - 1997 |
Externally published | Yes |
Event | Proceedings of the 1996 MRS Fall Meeting - Boston, MA, USA Duration: Dec 2 1996 → Dec 6 1996 |
Other
Other | Proceedings of the 1996 MRS Fall Meeting |
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City | Boston, MA, USA |
Period | 12/2/96 → 12/6/96 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials