Thermodynamic Analysis and Kinetic Implications of Chemical Vapor Deposition of Sic from Si‐C‐C1‐H Gas Systems

Engineering & Materials Science

• Chemical vapor deposition 100%
• Thermodynamics 73%
• Molecules 55%
• Gases 49%
• Silicon 45%
• Carbon 43%
• Phase boundaries 39%
• Acetylene 38%
• Partial pressure 33%
• Gas mixtures 32%
• Deposits 28%
• Methane 26%
• Geometry 17%

Chemical Compounds

• Chemical Vapour Deposition 77%
• Gas 45%
• Phase Interface 32%
• Deposition Process 31%
• Partial Pressure 27%
• Carbon Atom 26%
• Acetylene 26%
• Methane 22%
• Molecule 19%
• Thermodynamics 17%
• Chloride 16%
• Mixture 12%
• Surface 9%