Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers

S. J. Sweeney; K. Hild; I. P. Marko; S. Q. Yu; Shane Johnson; Yong-Hang Zhang

doi:10.1109/ISLC.2008.4636020

Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers

S. J. Sweeney, K. Hild, I. P. Marko, S. Q. Yu, Shane Johnson, Yong-Hang Zhang

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Under ambient conditions, the temperature sensitivity of 1.3μm GaAsSb lasers is limited by non-radiative current losses. These are shown to be a critical design consideration for producing temperature insensitive VCSEL operation around room temperature.

Original language	English (US)
Title of host publication	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Pages	83-84
Number of pages	2
DOIs	https://doi.org/10.1109/ISLC.2008.4636020
State	Published - 2008
Event	21st IEEE International Semiconductor Laser Conference, ISLC 2008 - Sorrento, Italy Duration: Sep 14 2008 → Sep 18 2008

Publication series

Name	Conference Digest - IEEE International Semiconductor Laser Conference
ISSN (Print)	0899-9406

Other

Other	21st IEEE International Semiconductor Laser Conference, ISLC 2008
Country/Territory	Italy
City	Sorrento
Period	9/14/08 → 9/18/08

ASJC Scopus subject areas

Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Access to Document

10.1109/ISLC.2008.4636020

Cite this

Sweeney, S. J., Hild, K., Marko, I. P., Yu, S. Q., Johnson, S., & Zhang, Y.-H. (2008). Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers. In 21st IEEE International Semiconductor Laser Conference, ISLC 2008 (pp. 83-84). Article 4636020 (Conference Digest - IEEE International Semiconductor Laser Conference). https://doi.org/10.1109/ISLC.2008.4636020

Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers. / Sweeney, S. J.; Hild, K.; Marko, I. P. et al.
21st IEEE International Semiconductor Laser Conference, ISLC 2008. 2008. p. 83-84 4636020 (Conference Digest - IEEE International Semiconductor Laser Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Sweeney, SJ, Hild, K, Marko, IP, Yu, SQ, Johnson, S & Zhang, Y-H 2008, Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers. in 21st IEEE International Semiconductor Laser Conference, ISLC 2008., 4636020, Conference Digest - IEEE International Semiconductor Laser Conference, pp. 83-84, 21st IEEE International Semiconductor Laser Conference, ISLC 2008, Sorrento, Italy, 9/14/08. https://doi.org/10.1109/ISLC.2008.4636020

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title = "Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers",

abstract = "Under ambient conditions, the temperature sensitivity of 1.3μm GaAsSb lasers is limited by non-radiative current losses. These are shown to be a critical design consideration for producing temperature insensitive VCSEL operation around room temperature.",

author = "Sweeney, {S. J.} and K. Hild and Marko, {I. P.} and Yu, {S. Q.} and Shane Johnson and Yong-Hang Zhang",

year = "2008",

doi = "10.1109/ISLC.2008.4636020",

language = "English (US)",

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AU - Johnson, Shane

AU - Zhang, Yong-Hang

PY - 2008

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ER -

Thermal characteristics of 1.3μm GaAsSb/GaAs-based edge- and surface-emitting lasers

Abstract

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ASJC Scopus subject areas

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