Theory of the electronic density of states of amorphous tetrahedrally bonded semiconductors

D. Weaire; M. F. Thorpe; V. Heine

doi:10.1016/0022-3093(72)90125-1

Theory of the electronic density of states of amorphous tetrahedrally bonded semiconductors

D. Weaire, M. F. Thorpe, V. Heine

Arizona State University

Research output: Contribution to journal › Article › peer-review

12 Scopus citations

Abstract

Recent progress in the analysis of the properties of a simple tight binding Hamiltonian, appropriate to the study of the role of topological disorder in determining properties of amorphous semiconductors, is reviewed. The band structure generated by such a Hamiltonian for the diamond cubic structure is compared with a more realistic calculation for Ge.

Original language	English (US)
Pages (from-to)	128-133
Number of pages	6
Journal	Journal of Non-Crystalline Solids
Volume	8-10
Issue number	C
DOIs	https://doi.org/10.1016/0022-3093(72)90125-1
State	Published - Jun 1972

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Ceramics and Composites
Condensed Matter Physics
Materials Chemistry

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10.1016/0022-3093(72)90125-1

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title = "Theory of the electronic density of states of amorphous tetrahedrally bonded semiconductors",

abstract = "Recent progress in the analysis of the properties of a simple tight binding Hamiltonian, appropriate to the study of the role of topological disorder in determining properties of amorphous semiconductors, is reviewed. The band structure generated by such a Hamiltonian for the diamond cubic structure is compared with a more realistic calculation for Ge.",

author = "D. Weaire and Thorpe, {M. F.} and V. Heine",

year = "1972",

month = jun,

doi = "10.1016/0022-3093(72)90125-1",

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journal = "Journal of Non-Crystalline Solids",

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T1 - Theory of the electronic density of states of amorphous tetrahedrally bonded semiconductors

AU - Weaire, D.

AU - Thorpe, M. F.

AU - Heine, V.

PY - 1972/6

Y1 - 1972/6

N2 - Recent progress in the analysis of the properties of a simple tight binding Hamiltonian, appropriate to the study of the role of topological disorder in determining properties of amorphous semiconductors, is reviewed. The band structure generated by such a Hamiltonian for the diamond cubic structure is compared with a more realistic calculation for Ge.

AB - Recent progress in the analysis of the properties of a simple tight binding Hamiltonian, appropriate to the study of the role of topological disorder in determining properties of amorphous semiconductors, is reviewed. The band structure generated by such a Hamiltonian for the diamond cubic structure is compared with a more realistic calculation for Ge.

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AN - SCOPUS:49649143081

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VL - 8-10

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JO - Journal of Non-Crystalline Solids

JF - Journal of Non-Crystalline Solids

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ER -

Theory of the electronic density of states of amorphous tetrahedrally bonded semiconductors

Abstract

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