@article{09ee3fac99b74e6ab0e8f97e39f779f1,
title = "Theory and design of electron blocking layers for III-N-based laser diodes by numerical simulation",
abstract = "Although both III-N laser diodes (LDs) and LEDs employ electron blocking layers (EBLs) to reduce electron leakage from the active region, LDs typically operate at far higher current densities than LEDs. Shortcomings of the common rectangular EBL are discussed. Two alternative EBL designs have been systematically studied using numerical simulation: the inversetapered EBL and the inverse-tapered step-graded EBL. It is shown that the efficacy of each of these EBL designs depends strongly on the operational current density, suggesting that the EBL design considerations for III-N LDs and LEDs are fundamentally different.",
keywords = "Device modeling, Electron blocking layer, III-nitride, Laser diode, VCSEL",
author = "Karan Mehta and Liu, {Yuh Shiuan} and Jialin Wang and Hoon Jeong and Theeradetch Detchprohm and Park, {Young Jae} and Alugubelli, {Shanthan Reddy} and Shuo Wang and Fernando Ponce and Shen, {Shyh Chiang} and Dupuis, {Russell D.} and Yoder, {P. Douglas}",
note = "Funding Information: Manuscript received March 1, 2018; revised June 29, 2018 and September 20, 2018; accepted October 11, 2018. Date of publication October 18, 2018; date of current version November 1, 2018. This work was partially supported by the Defense Advanced Research Projects Agency (DARPA) under Contract No. HR0011-16-C-0120, by the Georgia Research Alliance, and the Steve W. Chaddick Endowed Chair in Optoelectronics. (Corresponding author: Karan Mehta.) K. Mehta, Y.-S. Liu, J. Wang, H. Jeong, T. Detchprohm, Y. J. Park, S.-C. Shen, R. D. Dupuis, and P. D. Yoder are with the School of Electrical and Computer Engineering, Georgia Institute of Technology, Atlanta, GA 30332 USA (e-mail: karan.mehta@gatech.edu). Publisher Copyright: {\textcopyright} 2018 IEEE.",
year = "2018",
doi = "10.1109/JQE.2018.2876662",
language = "English (US)",
volume = "54",
journal = "IEEE Journal of Quantum Electronics",
issn = "0018-9197",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "6",
}