The transient response of quasi-two-dimensional semiconductors under hot electron conditions

P. Das, D. K. Ferry, A. H. Barr

Research output: Contribution to journalArticlepeer-review

7 Scopus citations


In calculating the transport properties of semiconductors in the presence of high electric fields, one must consider the effects of both the momentum, energy, and population-transfer relaxation times of the individual valleys, or quantum levels in a quasi-two-dimensional system. In recent calculations of hot electron microwave conductivities of quasi-two-dimensional silicon 〈100〉 samples it was found that the microwave conductivity at a fixed bias electric field showed non-monotonic behavior when plotted as a function of frequency, and has a conductivity peak in the high frequency region. To further clarify this conductivity peak and its implications for velocity overshoot, we have carried out transient response solutions to the electron transport for both large-signal and small-signal conditions. In this paper, the results of these calculations for electrons in a 〈100〉 inversion layer are reported. The response of the electron gas to a large dc field step and to a small step applied upon a large dc bias field are calculated. Much of the velocity overshoot and ac conductivity peaking are related to the differential repopulation among the inequivalent valley sub-bands.

Original languageEnglish (US)
Pages (from-to)147-155
Number of pages9
JournalSurface Science
Issue numberC
StatePublished - May 1 1978
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Materials Chemistry


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