The structure of rapidly thermally annealed nitrogen-implanted silicon

Z. Liliental, Ray Carpenter, J. C. Kelly

    Research output: Contribution to journalArticlepeer-review

    3 Scopus citations


    The structure and composition of nitrogen-implanted silicon (to a low dose of 2 × 1017 cm-2) were studied. The implantation produced an amorphized silicon layer containing nitrogen, followed by a crystalline silicon layer with a high density of {113} defects and faulted loops on {111} planes. Rapid thermal annealing (heat pulse) at 900 and 1000°C for 20s removed the metastable {113} defects, increased the density of {111} defects and resulted in a redistribution of nitrogen in the polycrystalline silicon formed from the amorphous silicon layers.

    Original languageEnglish (US)
    Pages (from-to)141-150
    Number of pages10
    JournalThin Solid Films
    Issue number1
    StatePublished - Apr 1 1986

    ASJC Scopus subject areas

    • Electronic, Optical and Magnetic Materials
    • Surfaces and Interfaces
    • Surfaces, Coatings and Films
    • Metals and Alloys
    • Materials Chemistry


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