Using fluctuation microscopy, we show that ion-implanted amorphous silicon has more medium-range order than is expected from the continuous random network model. From our previous work on evaporated and sputtered amorphous silicon, we conclude that the structure is paracrystalline, i.e. it possesses crystalline-like order which decays with distance from any point. The observation might pose an explanation for the large heat of relaxation that is evolved by ion-implanted amorphous semiconductors.
|Original language||English (US)|
|Title of host publication||Materials Research Society Symposium - Proceedings|
|Number of pages||4|
|State||Published - 1999|
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials