TY - GEN
T1 - The Sensitive Region of Displacement Damage in LPNP Induced by Various Charged Particles
AU - Li, Xingji
AU - Yang, Jianqun
AU - Barnaby, Hugh J.
AU - Li, Pengwei
AU - Sun, Xiangsong
AU - Dong, Lei
AU - Galloway, Kenneth F.
AU - Schrimpf, R. D.
AU - Fleetwood, D. M.
N1 - Funding Information:
The project supported by Science Challenge Project (No.TZ2018004), Science and Technology on Analog Integrated Circuit Laboratory (6142802WD201803) and the National Natural Science Foundation of China (No. 11575049) Xingji Li, Jianqun Yang, Pengwei Li, Xiangsong Sun and Lei Dong are with School of Materials Science and Engineering, Harbin Institute of Technology, Harbin 150001, China (corresponding author to provide phone: +86-451-86417840; fax: +86-451-86415168; e-mail: lxj0218@ hit.edu.cn).
Publisher Copyright:
© 2019 IEEE.
PY - 2019
Y1 - 2019
N2 - In this paper, the sensitive region of displacement damage in LPNP induced by 10 MeV Si ions, 40 MeV Si ions and 3 MeV protons is investigated. Electrical parameters are measured in-situ using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation-induced defects caused by various ions are characterized by deep level transient spectroscopy (DLTS). Experimental results show that with irradiation fluence of various particles increases, the excess base current increases and the ideality factor does not change and is close to 2. The change in the reciprocal of current gain of LPNP transistors caused by the three types of particles can be normalized in one line when Si/SiO2 interface rather than base region is considered as the sensitive region of the displacement damage. DLTS results show radiation defects in LPNP transistors caused by the three types of particles are main interface traps, determining that the Si/SiO2 interface becomes a radiation sensitive region of the LPNP devices.
AB - In this paper, the sensitive region of displacement damage in LPNP induced by 10 MeV Si ions, 40 MeV Si ions and 3 MeV protons is investigated. Electrical parameters are measured in-situ using KEITHLEY 4200-SCS semiconductor characterization system during irradiation. The radiation-induced defects caused by various ions are characterized by deep level transient spectroscopy (DLTS). Experimental results show that with irradiation fluence of various particles increases, the excess base current increases and the ideality factor does not change and is close to 2. The change in the reciprocal of current gain of LPNP transistors caused by the three types of particles can be normalized in one line when Si/SiO2 interface rather than base region is considered as the sensitive region of the displacement damage. DLTS results show radiation defects in LPNP transistors caused by the three types of particles are main interface traps, determining that the Si/SiO2 interface becomes a radiation sensitive region of the LPNP devices.
KW - bipolar junction transistors
KW - deep level transient spectroscopy
KW - displacement defects
KW - heavy ions
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U2 - 10.1109/RADECS47380.2019.9745712
DO - 10.1109/RADECS47380.2019.9745712
M3 - Conference contribution
AN - SCOPUS:85128565166
T3 - 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
BT - 2019 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 19th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2019
Y2 - 16 September 2019 through 20 September 2019
ER -