The schottky junction transistor - A contender for ultralow-power radiation-tolerant space electronics

J. Y. Spann, P. Jaconelli, Z. Wu, Trevor Thornton, William T. Kemp, Steven J. Sampson

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Scopus citations


This paper is concerned with a new sub-threshold device configuration, the Schottky Junction Transistor (SJT). Results from measurements and numerical simulations of SJTs with gate lengths in the range 2 to 0.3 pm are presented. Detailed measurements of the d.c. characteristics of a 2 pm gate length device agree well with numerical simulations. Measurements of transconductance and gate capacitance suggest that this relatively long gate length, L, device will have a cut-off frequency 5-6 times higher that that of an equivalent metal oxide semiconductor field effect transistor (MOSFET) carrying the same current. When projected to gate lengths of 0.1 p, cut-off fi-equencies in excess of 10 GHz are predicted. Prototype devices made at ASU perform as expected from numerical simulations. The same devices have now been exposed to 50 keV x-rays at total doses up to 200 had. The paper will present an overview of the SJT and describe the recent total dose exposure measurements.

Original languageEnglish (US)
Title of host publication2003 IEEE Aerospace Conference, Proceedings
Number of pages7
StatePublished - 2003
Event2003 IEEE Aerospace Conference - Big Sky, MT, United States
Duration: Mar 8 2003Mar 15 2003

Publication series

NameIEEE Aerospace Conference Proceedings
ISSN (Print)1095-323X


Other2003 IEEE Aerospace Conference
Country/TerritoryUnited States
CityBig Sky, MT

ASJC Scopus subject areas

  • Aerospace Engineering
  • Space and Planetary Science


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