TY - GEN
T1 - The impact of the FeGa complex on directionally solidified, mono-crystalline, Ga-doped silicon
AU - Norland, Tine Uberg
AU - Bernardini, Simone
AU - Haug, Halvard
AU - Stoddard, Nathan
AU - Bertoni, Mariana
N1 - Publisher Copyright:
© 2016 IEEE.
PY - 2016/11/18
Y1 - 2016/11/18
N2 - In this work we show that the high minority carrier lifetime in as-grown Ga-Si wafers is dominated by low levels of iron contamination incorporated during silicon growth. Upon phosphorous diffusion iron is however effectively removed, increasing the bulk carrier lifetime from a few hundred microseconds to well above one milli-second. Lifetime spectroscopy in combination with Shockley Read Hall theory was used to determine the concentrations of Fei and FeGa complexes in the course of the FeGa association. Finally, we use the estimated concentrations of FeGa as a function of time of storage in the dark to validate that FeGa association follows the laws of coulombic attraction similar to FeB.
AB - In this work we show that the high minority carrier lifetime in as-grown Ga-Si wafers is dominated by low levels of iron contamination incorporated during silicon growth. Upon phosphorous diffusion iron is however effectively removed, increasing the bulk carrier lifetime from a few hundred microseconds to well above one milli-second. Lifetime spectroscopy in combination with Shockley Read Hall theory was used to determine the concentrations of Fei and FeGa complexes in the course of the FeGa association. Finally, we use the estimated concentrations of FeGa as a function of time of storage in the dark to validate that FeGa association follows the laws of coulombic attraction similar to FeB.
KW - FeGa association
KW - gallium doped silicon
KW - injection dependent lifetime spectroscopy
KW - iron contamination
KW - light induced degradation
UR - http://www.scopus.com/inward/record.url?scp=85003726494&partnerID=8YFLogxK
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U2 - 10.1109/PVSC.2016.7749409
DO - 10.1109/PVSC.2016.7749409
M3 - Conference contribution
AN - SCOPUS:85003726494
T3 - Conference Record of the IEEE Photovoltaic Specialists Conference
SP - 62
EP - 67
BT - 2016 IEEE 43rd Photovoltaic Specialists Conference, PVSC 2016
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 43rd IEEE Photovoltaic Specialists Conference, PVSC 2016
Y2 - 5 June 2016 through 10 June 2016
ER -