The formation of ordered structures in InGaN layers

M. Rao, N. Newman, S. Mahajan

Research output: Contribution to journalArticlepeer-review

13 Scopus citations


We investigated atomic ordering in InxGa1-xN layers for x between 0.03 and 0.28 using transmission electron microscopy. We demonstrate that {1 0 -1 1} facets play a role in 1:1 ordering. Deviations in composition from x = 0.5 are accommodated by the formation of small ordered regions embedded in a short-range ordered or disordered matrix.

Original languageEnglish (US)
Pages (from-to)33-36
Number of pages4
JournalScripta Materialia
Issue number1
StatePublished - Jan 2007
Externally publishedYes


  • Chemical vapor deposition (CVD)
  • Compound semiconductors
  • Group III nitrides
  • Ordering
  • Transmission electron microscopy (TEM)

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering
  • Metals and Alloys


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