The formation of ordered structures in InGaN layers

M. Rao; N. Newman; S. Mahajan

doi:10.1016/j.scriptamat.2006.08.068

The formation of ordered structures in InGaN layers

M. Rao, N. Newman, S. Mahajan

Research output: Contribution to journal › Article › peer-review

13 Scopus citations

Abstract

We investigated atomic ordering in In_xGa_1-xN layers for x between 0.03 and 0.28 using transmission electron microscopy. We demonstrate that {1 0 -1 1} facets play a role in 1:1 ordering. Deviations in composition from x = 0.5 are accommodated by the formation of small ordered regions embedded in a short-range ordered or disordered matrix.

Original language	English (US)
Pages (from-to)	33-36
Number of pages	4
Journal	Scripta Materialia
Volume	56
Issue number	1
DOIs	https://doi.org/10.1016/j.scriptamat.2006.08.068
State	Published - Jan 2007
Externally published	Yes

Keywords

Chemical vapor deposition (CVD)
Compound semiconductors
Group III nitrides
Ordering
Transmission electron microscopy (TEM)

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering
Metals and Alloys

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10.1016/j.scriptamat.2006.08.068

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title = "The formation of ordered structures in InGaN layers",

abstract = "We investigated atomic ordering in InxGa1-xN layers for x between 0.03 and 0.28 using transmission electron microscopy. We demonstrate that {1 0 -1 1} facets play a role in 1:1 ordering. Deviations in composition from x = 0.5 are accommodated by the formation of small ordered regions embedded in a short-range ordered or disordered matrix.",

keywords = "Chemical vapor deposition (CVD), Compound semiconductors, Group III nitrides, Ordering, Transmission electron microscopy (TEM)",

author = "M. Rao and N. Newman and S. Mahajan",

note = "Funding Information: The authors gratefully acknowledge the support of this work by the NSF.",

year = "2007",

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doi = "10.1016/j.scriptamat.2006.08.068",

language = "English (US)",

volume = "56",

pages = "33--36",

journal = "Scripta Materialia",

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T1 - The formation of ordered structures in InGaN layers

AU - Rao, M.

AU - Newman, N.

AU - Mahajan, S.

N1 - Funding Information: The authors gratefully acknowledge the support of this work by the NSF.

PY - 2007/1

Y1 - 2007/1

N2 - We investigated atomic ordering in InxGa1-xN layers for x between 0.03 and 0.28 using transmission electron microscopy. We demonstrate that {1 0 -1 1} facets play a role in 1:1 ordering. Deviations in composition from x = 0.5 are accommodated by the formation of small ordered regions embedded in a short-range ordered or disordered matrix.

AB - We investigated atomic ordering in InxGa1-xN layers for x between 0.03 and 0.28 using transmission electron microscopy. We demonstrate that {1 0 -1 1} facets play a role in 1:1 ordering. Deviations in composition from x = 0.5 are accommodated by the formation of small ordered regions embedded in a short-range ordered or disordered matrix.

KW - Chemical vapor deposition (CVD)

KW - Compound semiconductors

KW - Group III nitrides

KW - Ordering

KW - Transmission electron microscopy (TEM)

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DO - 10.1016/j.scriptamat.2006.08.068

M3 - Article

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SN - 1359-6462

VL - 56

SP - 33

EP - 36

JO - Scripta Materialia

JF - Scripta Materialia

IS - 1

ER -

The formation of ordered structures in InGaN layers

Abstract

Keywords

ASJC Scopus subject areas

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