The electron-phonon scattering rate of zinc blende GaN

R. Akis, M. Dür, Stephen Goodnick

Research output: Contribution to journalArticlepeer-review

5 Scopus citations


We have performed calculations of the electron-phonon scattering rate of zinc blende GaN using the rigid psuedo-ion model. We find that the calculated rates are relatively insensitive to assumptions made regarding the underlying band structure and phonon dispersion and, to a very good approximation, follow the electronic density of states. The latter result allows an optical deformation scattering constant to be fitted.

Original languageEnglish (US)
Pages (from-to)42-46
Number of pages5
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - Mar 2002


  • Electron-phonon interaction
  • GaN
  • High-field transport

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


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