The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

Aldo I. Vidana; Nathaniel A. Dodds; R. Nathan Nowlin; Trace M. Wallace; Phil J. Oldiges; Brian M. Dodd; Jenny Xiong; Rick M. Cadena; James Trippe; Jeffrey S. Kauppila; Lloyd W. Massengill; Hugh J. Barnaby

doi:10.1109/TNS.2024.3359113

The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

Aldo I. Vidana, Nathaniel A. Dodds, R. Nathan Nowlin, Trace M. Wallace, Phil J. Oldiges, Brian M. Dodd, Jenny Xiong, Rick M. Cadena, James Trippe, Jeffrey S. Kauppila, Lloyd W. Massengill, Hugh J. Barnaby

Engineering, Ira A. Fulton Schools of (IAFSE)

Research output: Contribution to journal › Article › peer-review

Abstract

This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.

Original language	English (US)
Pages (from-to)	1
Number of pages	1
Journal	IEEE Transactions on Nuclear Science
DOIs	https://doi.org/10.1109/TNS.2024.3359113
State	Accepted/In press - 2024

Keywords

Degradation
FinFET
FinFETs
leakage current
Leakage currents
Logic gates
number of fins per transistors
Periodic structures
Threshold voltage
threshold voltage
total ionizing dose
Transistors

ASJC Scopus subject areas

Nuclear and High Energy Physics
Nuclear Energy and Engineering
Electrical and Electronic Engineering

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10.1109/TNS.2024.3359113

Cite this

Vidana, A. I., Dodds, N. A., Nowlin, R. N., Wallace, T. M., Oldiges, P. J., Dodd, B. M., Xiong, J., Cadena, R. M., Trippe, J., Kauppila, J. S., Massengill, L. W., & Barnaby, H. J. (Accepted/In press). The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology. IEEE Transactions on Nuclear Science, 1. https://doi.org/10.1109/TNS.2024.3359113

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title = "The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology",

abstract = "This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries{\textquoteright} 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, {"}Gate-On{"} and {"}Pass-Gate,{"} with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.",

keywords = "Degradation, FinFET, FinFETs, leakage current, Leakage currents, Logic gates, number of fins per transistors, Periodic structures, Threshold voltage, threshold voltage, total ionizing dose, Transistors",

author = "Vidana, {Aldo I.} and Dodds, {Nathaniel A.} and Nowlin, {R. Nathan} and Wallace, {Trace M.} and Oldiges, {Phil J.} and Dodd, {Brian M.} and Jenny Xiong and Cadena, {Rick M.} and James Trippe and Kauppila, {Jeffrey S.} and Massengill, {Lloyd W.} and Barnaby, {Hugh J.}",

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doi = "10.1109/TNS.2024.3359113",

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AU - Vidana, Aldo I.

AU - Dodds, Nathaniel A.

AU - Nowlin, R. Nathan

AU - Wallace, Trace M.

AU - Oldiges, Phil J.

AU - Dodd, Brian M.

AU - Xiong, Jenny

AU - Cadena, Rick M.

AU - Trippe, James

AU - Kauppila, Jeffrey S.

AU - Massengill, Lloyd W.

AU - Barnaby, Hugh J.

N1 - Publisher Copyright: IEEE

PY - 2024

Y1 - 2024

N2 - This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.

AB - This abstract presents a comprehensive analysis of total ionizing dose (TID) response in GlobalFoundries’ 12LP 12nm bulk FinFET technology using 10keV X-rays. Devices with higher threshold voltages (VTs) demonstrated lower increases in off-state leakage current (IDS,OFF) post-irradiation, highlighting the mitigating role of high VT in TID response. Our data shows that transistors with fewer fins exhibit superior TID resistance, implying lower susceptibility to radiation effects. Our study also probed two bias conditions, "Gate-On" and "Pass-Gate," with the former displaying more severe TID degradation. Interestingly, p-type devices displayed negligible degradation, underscoring their inherent resilience to TID effects. Additionally, medium thick n-type devices echoed the fin-count-dependent TID response observed in other transistor types, further strengthening our findings. These results underscore the importance of strategic transistor selection and design for enhancing the TID resilience of future CMOS FinFET architectures, particularly critical in radiation-intense environments.

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KW - total ionizing dose

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The Effects of Threshold Voltage and Number of Fins per Transistor on the TID Response of GF 12LP Technology

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Keywords

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