The effect of ionizing radiation on sol-gel ferroelectric PZT capacitors

J. M. Benedetto, R. A. Moore, F. B. McLean, P. S. Brody, Sandwip Dey

Research output: Contribution to journalArticlepeer-review

72 Scopus citations


Ferroelectric (FE) thin-film capacitors were irradiated to 100 Mrad(Si) with 10-keV x rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion is dependent upon the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-Khz square wave. The amount of damage removed is dependent upon the radiation conditions.

Original languageEnglish (US)
Pages (from-to)1713-1717
Number of pages5
JournalIEEE Transactions on Nuclear Science
Issue number6
StatePublished - Dec 1990

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Nuclear Energy and Engineering
  • Electrical and Electronic Engineering


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