@inproceedings{26a5315d94b44928acd99a87d53e7be2,
title = "The effect of device geometry on IGFET characteristics",
abstract = "A novel technique for the fabrication of asymmetrical incompletely gated transistors is described. The subthreshold characteristics of transistors fabricated using the technique are measured and conclusions concerning the mechanisms responsible for the observations are presented.",
author = "Serack, {J. A.} and Walton, {A. J.} and Robertson, {J. M.}",
year = "1987",
month = jan,
day = "1",
language = "English (US)",
isbn = "9780444704771",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "915--918",
booktitle = "ESSDERC 1987 - 17th European Solid State Device Research Conference",
note = "17th European Solid State Device Research Conference, ESSDERC 1987 ; Conference date: 14-09-1987 Through 17-09-1987",
}