The Bloch-FET-A Lateral Surface Soperlattice Device

R. K. Reich, Robert Oscar Grondin, D. K. Ferry, G. J. Iafrate

Research output: Contribution to journalArticlepeer-review

9 Scopus citations


We describe a lateral surface superlattice device embedded in a MOSFET structure. Control of the inversion layer density and the two-dimensional quantized inversion layer itself allows optimizing the sub-band energy level spacing for a variety of applications. In particular, the narrow bands that arise in the inversion layer itself lead to the possibility of readily achieving negative differential conductivity in the transport properties of electrons through the device.

Original languageEnglish (US)
Pages (from-to)381-383
Number of pages3
JournalIEEE Electron Device Letters
Issue number12
StatePublished - Dec 1982
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


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