Abstract
Structures integrated onto a BiCMOS test chip are specially designed to characterize the complex mechanisms related to proton radiation response in bipolar technologies. Bipolar devices from a commercial process are modified to include independent gate terminals. Through the use of gate control, the effects of proton-induced defects on discrete bipolar devices and analog bipolar circuits can be analyzed independently, thereby facilitating a quantitative description of the nonlinear relationship between the radiation defects and electrical response at both the device and circuit level.
Original language | English (US) |
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Pages (from-to) | 253-258 |
Number of pages | 6 |
Journal | IEEE Transactions on Semiconductor Manufacturing |
Volume | 16 |
Issue number | 2 |
DOIs | |
State | Published - May 2003 |
Externally published | Yes |
Keywords
- Base current
- Bipolar junction transistors
- Bulk traps
- Displacement damage
- High-energy protons
- Input bias current
- Interface traps
- Ionizing radiation
- Oxide trapped charge
- Surface recombination
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Industrial and Manufacturing Engineering
- Electrical and Electronic Engineering