TY - JOUR
T1 - Temperature-dependent photoluminescence in Ge
T2 - Experiment and theory
AU - Menéndez, José
AU - Poweleit, Christian D.
AU - Tilton, Sean E.
N1 - Funding Information:
Numerous discussions and exchanges of information with Dr. Nandan Tandon and Dr. Pengke Li are gratefully acknowledged. In particular, Dr. Tandon not only shared with us numerical values of his calculations in Ref. , which we used to generate Fig. , but contributed additional data points calculated expressly for this figure. Illuminating discussions with Dr. Li helped us compute the electron-phonon matrix elements needed for the modeling of TO-assisted PL. Additional discussions with Dr. Eugenijus Gaubas, Dr. Enrico Belloti, and Dr. Stefano Dominici helped us build a quantitative model of nonradiative recombination. This work was partially funded by the AFOSR under Grant No. FA9550-17-1-0314.
Publisher Copyright:
© 2020 American Physical Society. ©2020 American Physical Society.
PY - 2020/5/15
Y1 - 2020/5/15
N2 - We report a photoluminescence study of high-quality Ge samples at temperatures 12K≤T≤295K, over a spectral range that covers phonon-assisted emission from the indirect gap (between the lowest conduction band at the L point of the Brillouin zone and the top of the valence band at the Γ point), as well as direct gap emission (from the local minimum of the conduction band at the Γ point). The spectra display a rich structure with a rapidly changing line shape as a function of T. A theory is developed to account for the experimental results using analytical expressions for the contributions from LA, TO, LO, and TA phonons. Coupling of states exactly at the Γ and L points is forbidden by symmetry for the latter two phonon modes, but becomes allowed for nearby states and can be accounted for using wave-vector dependent deformation potentials. Excellent agreement is obtained between predicted and observed photoluminescence line shapes. A decomposition of the predicted signal in terms of the different phonon contributions implies that near-room temperature indirect optical absorption and emission are dominated by "forbidden" processes, and the deformation potentials for allowed processes are smaller than previously assumed.
AB - We report a photoluminescence study of high-quality Ge samples at temperatures 12K≤T≤295K, over a spectral range that covers phonon-assisted emission from the indirect gap (between the lowest conduction band at the L point of the Brillouin zone and the top of the valence band at the Γ point), as well as direct gap emission (from the local minimum of the conduction band at the Γ point). The spectra display a rich structure with a rapidly changing line shape as a function of T. A theory is developed to account for the experimental results using analytical expressions for the contributions from LA, TO, LO, and TA phonons. Coupling of states exactly at the Γ and L points is forbidden by symmetry for the latter two phonon modes, but becomes allowed for nearby states and can be accounted for using wave-vector dependent deformation potentials. Excellent agreement is obtained between predicted and observed photoluminescence line shapes. A decomposition of the predicted signal in terms of the different phonon contributions implies that near-room temperature indirect optical absorption and emission are dominated by "forbidden" processes, and the deformation potentials for allowed processes are smaller than previously assumed.
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U2 - 10.1103/PhysRevB.101.195204
DO - 10.1103/PhysRevB.101.195204
M3 - Article
AN - SCOPUS:85085989918
SN - 2469-9950
VL - 101
JO - Physical Review B
JF - Physical Review B
IS - 19
M1 - 195204
ER -