@inproceedings{b97ca9253bc54800a1a0c2e2061b6280,
title = "Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices",
abstract = "Temperature-dependent minority carrier lifetimes of InAs/InAs 1-xSbx type-II superlattices are presented. The longest lifetime at 11 K is 504 ± 40 ns and at 77 K is 412 ± 25 ns. Samples with long periods and small wave function overlaps have both non-radiative and radiative recombination mechanisms apparent, with comparable contributions from both near 77 K, and radiative recombination dominating at low temperatures. Samples with short periods and large wave function overlaps have radiative recombination dominating from 10 K until ∼200 K. The improved lifetimes observed will enable long minority carrier lifetime superlattices to be designed for high quantum efficiency, low dark current infrared detectors.",
keywords = "Infrared, Lifetime, Photoluminescence, Superlattice, Temperature-dependent",
author = "Steenbergen, {E. H.} and Connelly, {B. C.} and Metcalfe, {G. D.} and H. Shen and M. Wraback and D. Lubyshev and Y. Qiu and Fastenau, {J. M.} and Liu, {A. W K} and S. Elhamri and Cellek, {O. O.} and Yong-Hang Zhang",
year = "2012",
doi = "10.1117/12.930949",
language = "English (US)",
isbn = "9780819492296",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Infrared Sensors, Devices, and Applications II",
note = "Infrared Sensors, Devices, and Applications II ; Conference date: 14-08-2012 Through 15-08-2012",
}