Temperature dependence of the Urbach edge in GaAs

S. R. Johnson; T. Tiedje

doi:10.1063/1.359683

Temperature dependence of the Urbach edge in GaAs

S. R. Johnson, T. Tiedje

Research output: Contribution to journal › Article › peer-review

162 Scopus citations

Abstract

The temperature dependence of the optical-absorption edge (Urbach edge) of GaAs is measured in semi-insulating and n-type GaAs (n=2×10¹⁸ cm^-3) over the temperature range from room temperature to 700 °C. Both the optical absorption and the temperature are measured using a diffuse reflectance technique. The characteristic energy of the exponential absorption edge is found to increase linearly with temperature, from 7.5 meV at room temperature to 12.4 meV at 700 °C, for semi-insulating GaAs. The temperature dependent part of the width of the Urbach edge for semi-insulating GaAs is six times smaller than predicted by the standard theory where the edge width is proportional to the phonon population.

Original language	English (US)
Pages (from-to)	5609-5613
Number of pages	5
Journal	Journal of Applied Physics
Volume	78
Issue number	9
DOIs	https://doi.org/10.1063/1.359683
State	Published - 1995
Externally published	Yes

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Physics and Astronomy(all)

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10.1063/1.359683

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title = "Temperature dependence of the Urbach edge in GaAs",

abstract = "The temperature dependence of the optical-absorption edge (Urbach edge) of GaAs is measured in semi-insulating and n-type GaAs (n=2×1018 cm-3) over the temperature range from room temperature to 700 °C. Both the optical absorption and the temperature are measured using a diffuse reflectance technique. The characteristic energy of the exponential absorption edge is found to increase linearly with temperature, from 7.5 meV at room temperature to 12.4 meV at 700 °C, for semi-insulating GaAs. The temperature dependent part of the width of the Urbach edge for semi-insulating GaAs is six times smaller than predicted by the standard theory where the edge width is proportional to the phonon population.",

author = "Johnson, {S. R.} and T. Tiedje",

year = "1995",

doi = "10.1063/1.359683",

language = "English (US)",

volume = "78",

pages = "5609--5613",

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T1 - Temperature dependence of the Urbach edge in GaAs

AU - Johnson, S. R.

AU - Tiedje, T.

PY - 1995

Y1 - 1995

N2 - The temperature dependence of the optical-absorption edge (Urbach edge) of GaAs is measured in semi-insulating and n-type GaAs (n=2×1018 cm-3) over the temperature range from room temperature to 700 °C. Both the optical absorption and the temperature are measured using a diffuse reflectance technique. The characteristic energy of the exponential absorption edge is found to increase linearly with temperature, from 7.5 meV at room temperature to 12.4 meV at 700 °C, for semi-insulating GaAs. The temperature dependent part of the width of the Urbach edge for semi-insulating GaAs is six times smaller than predicted by the standard theory where the edge width is proportional to the phonon population.

AB - The temperature dependence of the optical-absorption edge (Urbach edge) of GaAs is measured in semi-insulating and n-type GaAs (n=2×1018 cm-3) over the temperature range from room temperature to 700 °C. Both the optical absorption and the temperature are measured using a diffuse reflectance technique. The characteristic energy of the exponential absorption edge is found to increase linearly with temperature, from 7.5 meV at room temperature to 12.4 meV at 700 °C, for semi-insulating GaAs. The temperature dependent part of the width of the Urbach edge for semi-insulating GaAs is six times smaller than predicted by the standard theory where the edge width is proportional to the phonon population.

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JO - Journal of Applied Physics

JF - Journal of Applied Physics

IS - 9

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Temperature dependence of the Urbach edge in GaAs

Abstract

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