TY - JOUR
T1 - Temperature dependence of atomic ordering and composition modulation in InAsSbBi grown by molecular beam epitaxy on GaSb substrates
AU - Kosireddy, R. R.
AU - Schaefer, S. T.
AU - Webster, P. T.
AU - Milosavljevic, M. S.
AU - Johnson, S. R.
N1 - Funding Information:
The authors acknowledge financial support through research sponsored by Air Force Research Laboratory [ 42 ] under agreement number FA9453-19-2-0004. The authors also acknowledge the use of facilities in the Eyring Materials Center at Arizona State University.
Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2021/4/5
Y1 - 2021/4/5
N2 - The structural and optical properties of two 210 nm thick InAsSbBi epilayers grown on (100) GaSb substrates by molecular beam epitaxy at 400 and 280 °C are investigated using X-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and photoluminescence spectroscopy. Both samples are free of observable defects. The higher temperature growth results in reduced Bi incorporation, good optical performance, smooth interfaces, and lateral composition modulation of the Bi mole fraction. The lower temperature growth results in near unity Bi incorporation, poor optical performance, interface roughness, and CuPtB -type atomic ordering on the {111}B planes.
AB - The structural and optical properties of two 210 nm thick InAsSbBi epilayers grown on (100) GaSb substrates by molecular beam epitaxy at 400 and 280 °C are investigated using X-ray diffraction, Rutherford backscattering spectroscopy, transmission electron microscopy, and photoluminescence spectroscopy. Both samples are free of observable defects. The higher temperature growth results in reduced Bi incorporation, good optical performance, smooth interfaces, and lateral composition modulation of the Bi mole fraction. The lower temperature growth results in near unity Bi incorporation, poor optical performance, interface roughness, and CuPtB -type atomic ordering on the {111}B planes.
KW - Atomic scale structure
KW - Composition fluctuations
KW - Molecular beam epitaxy
KW - Rutherford backscattering spectroscopy
KW - Semiconductors
KW - Transmission electron microscopy
KW - X-ray diffraction
UR - http://www.scopus.com/inward/record.url?scp=85096453264&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85096453264&partnerID=8YFLogxK
U2 - 10.1016/j.jallcom.2020.157860
DO - 10.1016/j.jallcom.2020.157860
M3 - Article
AN - SCOPUS:85096453264
SN - 0925-8388
VL - 859
JO - Journal of Alloys and Compounds
JF - Journal of Alloys and Compounds
M1 - 157860
ER -