Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

Nathaniel A. Riordan; Chaturvedi Gogineni; Shane Johnson; Xianfeng Lu; Tom Tiedje; Ding Ding; Yong-Hang Zhang; Rafael Fritz; Kolja Kolata; Sangam Chatterjee; Kerstin Volz; Stephan W. Koch

doi:10.1007/s10854-012-0665-1

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

Nathaniel A. Riordan, Chaturvedi Gogineni, Shane Johnson, Xianfeng Lu, Tom Tiedje, Ding Ding, Yong-Hang Zhang, Rafael Fritz, Kolja Kolata, Sangam Chatterjee, Kerstin Volz, Stephan W. Koch

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27 Scopus citations

Abstract

Bulk and quantum well GaAs _1-xBi _x/GaAs layers with Bi mole fractions from 0.02 to 0.10 are grown by molecular-beam epitaxy at temperatures ranging from 280 to 320 °C. The samples are characterized using temperature and pump-power dependent photoluminescence measurements covering 8-300 K and 1-250 mW (7-1,800 W/cm ²), respectively. The results indicate that there is strong reduction in bandgap energy with the incorporation of small amounts of Bi and that GaAsBi most likely forms a weak type-I band alignment with GaAs.

Original language	English (US)
Pages (from-to)	1799-1804
Number of pages	6
Journal	Journal of Materials Science: Materials in Electronics
Volume	23
Issue number	10
DOIs	https://doi.org/10.1007/s10854-012-0665-1
State	Published - Oct 2012

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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Riordan, N. A., Gogineni, C., Johnson, S., Lu, X., Tiedje, T., Ding, D., Zhang, Y.-H., Fritz, R., Kolata, K., Chatterjee, S., Volz, K., & Koch, S. W. (2012). Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs. Journal of Materials Science: Materials in Electronics, 23(10), 1799-1804. https://doi.org/10.1007/s10854-012-0665-1

Riordan, NA, Gogineni, C, Johnson, S, Lu, X, Tiedje, T, Ding, D, Zhang, Y-H, Fritz, R, Kolata, K, Chatterjee, S, Volz, K & Koch, SW 2012, 'Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs', Journal of Materials Science: Materials in Electronics, vol. 23, no. 10, pp. 1799-1804. https://doi.org/10.1007/s10854-012-0665-1

@article{f1166c1c84964f78b4284de70f7468a9,

title = "Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs",

abstract = "Bulk and quantum well GaAs 1-xBi x/GaAs layers with Bi mole fractions from 0.02 to 0.10 are grown by molecular-beam epitaxy at temperatures ranging from 280 to 320 °C. The samples are characterized using temperature and pump-power dependent photoluminescence measurements covering 8-300 K and 1-250 mW (7-1,800 W/cm 2), respectively. The results indicate that there is strong reduction in bandgap energy with the incorporation of small amounts of Bi and that GaAsBi most likely forms a weak type-I band alignment with GaAs.",

author = "Riordan, {Nathaniel A.} and Chaturvedi Gogineni and Shane Johnson and Xianfeng Lu and Tom Tiedje and Ding Ding and Yong-Hang Zhang and Rafael Fritz and Kolja Kolata and Sangam Chatterjee and Kerstin Volz and Koch, {Stephan W.}",

note = "Funding Information: Acknowledgments We gratefully acknowledge financial support through the National Science Foundation award DMR-0909028, the Natural Sciences and Engineering Research Council of Canada, the Deutsche Forschungsgemeinschaft (German Research Foundation), and the Materials World Network: III–V Bismide Materials for IR and Mid IR Semiconductors. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.",

year = "2012",

month = oct,

doi = "10.1007/s10854-012-0665-1",

language = "English (US)",

volume = "23",

pages = "1799--1804",

journal = "Journal of Materials Science: Materials in Electronics",

issn = "0957-4522",

publisher = "Springer New York",

number = "10",

}

TY - JOUR

T1 - Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

AU - Riordan, Nathaniel A.

AU - Gogineni, Chaturvedi

AU - Johnson, Shane

AU - Lu, Xianfeng

AU - Tiedje, Tom

AU - Ding, Ding

AU - Zhang, Yong-Hang

AU - Fritz, Rafael

AU - Kolata, Kolja

AU - Chatterjee, Sangam

AU - Volz, Kerstin

AU - Koch, Stephan W.

N1 - Funding Information: Acknowledgments We gratefully acknowledge financial support through the National Science Foundation award DMR-0909028, the Natural Sciences and Engineering Research Council of Canada, the Deutsche Forschungsgemeinschaft (German Research Foundation), and the Materials World Network: III–V Bismide Materials for IR and Mid IR Semiconductors. Copyright: Copyright 2012 Elsevier B.V., All rights reserved.

PY - 2012/10

Y1 - 2012/10

N2 - Bulk and quantum well GaAs 1-xBi x/GaAs layers with Bi mole fractions from 0.02 to 0.10 are grown by molecular-beam epitaxy at temperatures ranging from 280 to 320 °C. The samples are characterized using temperature and pump-power dependent photoluminescence measurements covering 8-300 K and 1-250 mW (7-1,800 W/cm 2), respectively. The results indicate that there is strong reduction in bandgap energy with the incorporation of small amounts of Bi and that GaAsBi most likely forms a weak type-I band alignment with GaAs.

AB - Bulk and quantum well GaAs 1-xBi x/GaAs layers with Bi mole fractions from 0.02 to 0.10 are grown by molecular-beam epitaxy at temperatures ranging from 280 to 320 °C. The samples are characterized using temperature and pump-power dependent photoluminescence measurements covering 8-300 K and 1-250 mW (7-1,800 W/cm 2), respectively. The results indicate that there is strong reduction in bandgap energy with the incorporation of small amounts of Bi and that GaAsBi most likely forms a weak type-I band alignment with GaAs.

UR - http://www.scopus.com/inward/record.url?scp=84867246642&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84867246642&partnerID=8YFLogxK

U2 - 10.1007/s10854-012-0665-1

DO - 10.1007/s10854-012-0665-1

M3 - Article

AN - SCOPUS:84867246642

SN - 0957-4522

VL - 23

SP - 1799

EP - 1804

JO - Journal of Materials Science: Materials in Electronics

JF - Journal of Materials Science: Materials in Electronics

IS - 10

ER -

Temperature and pump power dependent photoluminescence characterization of MBE grown GaAsBi on GaAs

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