Abstract
Si1-x-yGexCy samples grown on Si substrates by chemical vapor deposition was characterized by transmission electron microscopy (TEM). Different precursors and flow rates were used to vary the relative elemental compositions. Rutherford backscattering and secondary ion mass spectroscopy were employed for compositional analysis and TEM was used to determine microstructure. Electron transparent specimens were prepared in cross-section by a standard technique involving mechanical grinding, dimpling and argon ion-milling. Selected area diffraction patterns and optical diffractograms were used in determining the structure and lattice constants.
| Original language | English (US) |
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| Title of host publication | Proceedings - Annual Meeting, Microscopy Society of America |
| Editors | G.W. Bailey, A.J. Garratt-Reed |
| Pages | 840-841 |
| Number of pages | 2 |
| State | Published - 1994 |
| Event | Proceedings of the 52nd Annual Meeting of the Microscopy Society of America - New Orleans, LA, USA Duration: Jul 31 1994 → Aug 5 1994 |
Other
| Other | Proceedings of the 52nd Annual Meeting of the Microscopy Society of America |
|---|---|
| City | New Orleans, LA, USA |
| Period | 7/31/94 → 8/5/94 |
ASJC Scopus subject areas
- Engineering(all)