TEM analysis of the influence of dose on damage behavior in MeV Au2+-implanted silicon

N. D. Theodore, T. L. Alford, C. B. Carter, J. W. Mayer, N. W. Cheung

Research output: Contribution to journalArticlepeer-review

2 Scopus citations


Extended lattice damage created by implantation of 3.6 MeV Au2+ ions has been investigated using transmission electron microscopy (TEM) and Rutherford backscattering spectrometry (RBS). Systematic observations of damage for Au2+ ions implanted with varying doses into silicon are explained in terms of a model. The origin of two distinct bands of extended defects is explained in terms of annealing of the central region of implant-damage, during the course of the implantation. Two distinct bands of Au precipitates are observed in high-dose implanted samples. This observation is explained as being the result, in part, of segregation of gold in front of a recrystallizing front, and in part, of gettering of dopant-atoms to nodes in a dislocation network. The network arises as a result of dynamic annealing of damaged crystalline silicon.

Original languageEnglish (US)
Pages (from-to)124-131
Number of pages8
JournalApplied Physics A Solids and Surfaces
Issue number2
StatePublished - Feb 1992
Externally publishedYes


  • 61.70
  • 61.80
  • 81.40

ASJC Scopus subject areas

  • General Materials Science
  • General Engineering
  • Physics and Astronomy (miscellaneous)


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