Synthesis of Si-Ge nanoscale structures via deposition of single-source (GeH 3) 4-nSiH n hydrides

Changwu Hu, I. S T Tsong, V. D'Costa, Jose Menendez, Peter Crozier, J. Tolle, John Kouvetakis

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Growth of nanoscale islands with distinct Si0.33 Ge0.67, Si0.25 Ge0.75, and Si0.20 Ge0.80 compositions and uniform sizes is conducted on Si(100) via dehydrogenation of the single-source hydrides (H3 Ge)2 SiH2, (H3 Ge)3 SiH, and (H3 Ge)4 Si, respectively. High-spatial-resolution electron energy loss spectroscopy and Raman spectroscopy indicate homogeneous elemental concentrations within and among islands and confirm that their Si-Ge content is predetermined by the stoichiometry of the corresponding precursors. Z-contrast electron microscopy reveals distinct and perfectly epitaxial islands with atomically sharp interfaces grown via a smooth and continuous wetting layer ∼10 Å thick. Cross-sectional electron microscopy shows monomodal distributions of islands with defect-free microstructures. Low-energy electron microscopy studies of the film formation reveal that the growth proceeds via the Stranski-Krastanov mode. Assemblies of coherent quantum dots with highly controlled Ge-rich concentrations produced by this method are desirable for their potentially useful optical properties.

Original languageEnglish (US)
Article number083101
JournalApplied Physics Letters
Issue number8
StatePublished - Aug 22 2005

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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