Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of H3SiGeH3 and Ge(SiH 3)4

Changwu Hu; Jennifer L. Taraci; John Tolle; Matthew R. Bauer; Peter Crozier; Ignatius S T Tsong; John Kouvetakis

doi:10.1021/cm034477w

Synthesis of highly coherent SiGe and Si₄Ge nanostructures by molecular beam epitaxy of H₃SiGeH₃ and Ge(SiH ₃)₄

Changwu Hu, Jennifer L. Taraci, John Tolle, Matthew R. Bauer, Peter Crozier, Ignatius S T Tsong, John Kouvetakis

Research output: Contribution to journal › Article › peer-review

9 Scopus citations

Abstract

Stoichiometric SiGe and Si₄Ge epitaxial films and coherent islands are created on Si(100) via thermal dehydrogenation of H ₃SiGeH₃ and Ge-(SiH₃)₄, respectively. The control of morphology and composition x of Si _1-xGe_x nanostructures at the atomic level is achieved for the first time via CVD growth of single-source precursors containing precise atomic arrangements with direct Si-Ge bonds.

Original language	English (US)
Pages (from-to)	3569-3572
Number of pages	4
Journal	Chemistry of Materials
Volume	15
Issue number	19
DOIs	https://doi.org/10.1021/cm034477w
State	Published - Sep 23 2003

ASJC Scopus subject areas

Chemistry(all)
Chemical Engineering(all)
Materials Chemistry

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title = "Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of H3SiGeH3 and Ge(SiH 3)4",

abstract = "Stoichiometric SiGe and Si4Ge epitaxial films and coherent islands are created on Si(100) via thermal dehydrogenation of H 3SiGeH3 and Ge-(SiH3)4, respectively. The control of morphology and composition x of Si 1-xGex nanostructures at the atomic level is achieved for the first time via CVD growth of single-source precursors containing precise atomic arrangements with direct Si-Ge bonds.",

author = "Changwu Hu and Taraci, {Jennifer L.} and John Tolle and Bauer, {Matthew R.} and Peter Crozier and Tsong, {Ignatius S T} and John Kouvetakis",

year = "2003",

month = sep,

day = "23",

doi = "10.1021/cm034477w",

language = "English (US)",

volume = "15",

pages = "3569--3572",

journal = "Chemistry of Materials",

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T1 - Synthesis of highly coherent SiGe and Si4Ge nanostructures by molecular beam epitaxy of H3SiGeH3 and Ge(SiH 3)4

AU - Hu, Changwu

AU - Taraci, Jennifer L.

AU - Tolle, John

AU - Bauer, Matthew R.

AU - Crozier, Peter

AU - Tsong, Ignatius S T

AU - Kouvetakis, John

PY - 2003/9/23

Y1 - 2003/9/23

N2 - Stoichiometric SiGe and Si4Ge epitaxial films and coherent islands are created on Si(100) via thermal dehydrogenation of H 3SiGeH3 and Ge-(SiH3)4, respectively. The control of morphology and composition x of Si 1-xGex nanostructures at the atomic level is achieved for the first time via CVD growth of single-source precursors containing precise atomic arrangements with direct Si-Ge bonds.

AB - Stoichiometric SiGe and Si4Ge epitaxial films and coherent islands are created on Si(100) via thermal dehydrogenation of H 3SiGeH3 and Ge-(SiH3)4, respectively. The control of morphology and composition x of Si 1-xGex nanostructures at the atomic level is achieved for the first time via CVD growth of single-source precursors containing precise atomic arrangements with direct Si-Ge bonds.

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U2 - 10.1021/cm034477w

DO - 10.1021/cm034477w

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JO - Chemistry of Materials

JF - Chemistry of Materials

IS - 19

ER -

Synthesis of highly coherent SiGe and Si₄Ge nanostructures by molecular beam epitaxy of H₃SiGeH₃ and Ge(SiH ₃)₄

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