Switching at small magnetic fields in Josephson junctions fabricated with ferromagnetic barrier layers

Makram Abd El Qader, Rakesh Singh, Sarah N. Galvin, L. Yu, J. M. Rowell, Nathan Newman

Research output: Contribution to journalArticlepeer-review

63 Scopus citations

Abstract

Nb-based Josephson junctions have been fabricated, which can select one of two states depending on the relative magnetization of their ferromagnetic barrier layers. To minimize the free-layer switching energy, while maintaining adequate thermal stability at 4.2 K, a dilute Cu-permalloy alloy [Cu 0.7(Ni80Fe20)0.3] with a low magnetic saturation (Ms ∼ 80 emu/cm3) is used. The optimal thickness of the permalloy (Ni80Fe20) fixed-layer is shown to be 2.4 nm. Such devices exhibit switching at magnetic fields as low as 5 Oe, demonstrating their potential use in low power non-volatile memory for superconductor digital circuits.

Original languageEnglish (US)
Article number022602
JournalApplied Physics Letters
Volume104
Issue number2
DOIs
StatePublished - Jan 13 2014

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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