TY - JOUR
T1 - Surfactant-mediated growth of Ge/Si(0 0 1) studied by Raman spectroscopy and TEM
AU - Brill, G.
AU - Smith, David
AU - Chandrasekhar, D.
AU - Gogotsi, Y.
AU - Prociuk, A.
AU - Sivananthan, S.
N1 - Funding Information:
This work was partially supported through a sub-contract with EPIR, Ltd. The authors thank Z. Ali for technical support and F. Tuminello for help with Si substrate preparation. Electron micrographs were recorded at the Center for High-Resolution Electron Microscopy at Arizona State University.
PY - 1999/5
Y1 - 1999/5
N2 - Growth of Ge/Si follows the Stranski-Krastanov growth mode (2D→3D) because of the 4.2% lattice mismatch between Ge and Si. However, the growth mode can be altered to Frank-Van der Merwe (layer-by-layer) by depositing a suitable surfactant. In this study, we have grown thin and thick Ge(0 0 1)/Si(0 0 1) MBE layers with and without As deposition prior to Ge growth in order to investigate the details of surfactant-mediated epitaxy. Raman spectroscopy shows that without As surfactant use, Ge and Si interdiffuse at the interface and form an alloy. Furthermore, peak shift measurements as well as cross-sectional electron micrographs reveal that layers grown with As slowly relieve misfit strain through the accommodation of Lomer edge dislocations at the interface leaving a relaxed, nearly defect-free layer.
AB - Growth of Ge/Si follows the Stranski-Krastanov growth mode (2D→3D) because of the 4.2% lattice mismatch between Ge and Si. However, the growth mode can be altered to Frank-Van der Merwe (layer-by-layer) by depositing a suitable surfactant. In this study, we have grown thin and thick Ge(0 0 1)/Si(0 0 1) MBE layers with and without As deposition prior to Ge growth in order to investigate the details of surfactant-mediated epitaxy. Raman spectroscopy shows that without As surfactant use, Ge and Si interdiffuse at the interface and form an alloy. Furthermore, peak shift measurements as well as cross-sectional electron micrographs reveal that layers grown with As slowly relieve misfit strain through the accommodation of Lomer edge dislocations at the interface leaving a relaxed, nearly defect-free layer.
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U2 - 10.1016/S0022-0248(98)01410-9
DO - 10.1016/S0022-0248(98)01410-9
M3 - Conference article
AN - SCOPUS:0032683223
SN - 0022-0248
VL - 201
SP - 538
EP - 541
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
T2 - Proceedings of the 1998 10th International Conference on Molecular Beam Epitaxy (MBE-X)
Y2 - 31 August 1998 through 4 September 1998
ER -