Surface roughness induced scattering and band tailing

S. M. Goodnick; R. G. Gann; D. K. Ferry; C. W. Wilmsen; O. L. Krivanek

doi:10.1016/0039-6028(82)90591-X

Surface roughness induced scattering and band tailing

S. M. Goodnick, R. G. Gann, D. K. Ferry, C. W. Wilmsen, O. L. Krivanek

Research output: Contribution to journal › Article › peer-review

27 Scopus citations

Abstract

A random potential due to surface roughness has long been recognized as the dominant scattering mechanism at high electron concentrations in quantized inversion layers of semiconductors, but little definitive understanding is truly available. Here, the extent of band tailing and the role of this band tailing in electron transport have been estimated from the second-order correction to the surface subbands arising from the surface roughess induced random potential. Surface roughness parameters were determined from high resolution TEM pictures of the Si-SiO₂ interface and are found to be in reasonable agreement with earlier estimates. Calculations based upon these parameters indicate that band tailing is important at high inversion layer densities (≳ 10¹² cm²).

Original language	English (US)
Pages (from-to)	233-238
Number of pages	6
Journal	Surface Science
Volume	113
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(82)90591-X
State	Published - Jan 1 1982
Externally published	Yes

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(82)90591-X

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title = "Surface roughness induced scattering and band tailing",

abstract = "A random potential due to surface roughness has long been recognized as the dominant scattering mechanism at high electron concentrations in quantized inversion layers of semiconductors, but little definitive understanding is truly available. Here, the extent of band tailing and the role of this band tailing in electron transport have been estimated from the second-order correction to the surface subbands arising from the surface roughess induced random potential. Surface roughness parameters were determined from high resolution TEM pictures of the Si-SiO2 interface and are found to be in reasonable agreement with earlier estimates. Calculations based upon these parameters indicate that band tailing is important at high inversion layer densities (≳ 1012 cm2).",

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AU - Goodnick, S. M.

AU - Gann, R. G.

AU - Ferry, D. K.

AU - Wilmsen, C. W.

AU - Krivanek, O. L.

PY - 1982/1/1

Y1 - 1982/1/1

N2 - A random potential due to surface roughness has long been recognized as the dominant scattering mechanism at high electron concentrations in quantized inversion layers of semiconductors, but little definitive understanding is truly available. Here, the extent of band tailing and the role of this band tailing in electron transport have been estimated from the second-order correction to the surface subbands arising from the surface roughess induced random potential. Surface roughness parameters were determined from high resolution TEM pictures of the Si-SiO2 interface and are found to be in reasonable agreement with earlier estimates. Calculations based upon these parameters indicate that band tailing is important at high inversion layer densities (≳ 1012 cm2).

AB - A random potential due to surface roughness has long been recognized as the dominant scattering mechanism at high electron concentrations in quantized inversion layers of semiconductors, but little definitive understanding is truly available. Here, the extent of band tailing and the role of this band tailing in electron transport have been estimated from the second-order correction to the surface subbands arising from the surface roughess induced random potential. Surface roughness parameters were determined from high resolution TEM pictures of the Si-SiO2 interface and are found to be in reasonable agreement with earlier estimates. Calculations based upon these parameters indicate that band tailing is important at high inversion layer densities (≳ 1012 cm2).

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Surface roughness induced scattering and band tailing

Abstract

ASJC Scopus subject areas

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