Surface polarity determination in (110)-orientated compound semiconductors by high-resolution electron microscopy

David Smith; Rob W. Glaisher; Ping Lu

doi:10.1080/09500838908214779

Surface polarity determination in (110)-orientated compound semiconductors by high-resolution electron microscopy

David Smith, Rob W. Glaisher, Ping Lu

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Abstract

Several distinctive image features in principle enable the polarity of (110)-oriented compound semiconductors to be determined from high-resolution electron micrographs. In practice, knowledge of objective lens defocus and crystalthickness, and precise control of crystal and beam tilt, are generally required beforeunambiguous discrimination of crystal polarity is possible. Confirmation of surfacepolarity for a (1 x 1) reconstruction of a (110) CdTe surface observed by profileimaging is reported.

Original language	English (US)
Pages (from-to)	69-75
Number of pages	7
Journal	Philosophical Magazine Letters
Volume	59
Issue number	2
DOIs	https://doi.org/10.1080/09500838908214779
State	Published - Feb 1989

ASJC Scopus subject areas

Condensed Matter Physics

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10.1080/09500838908214779

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title = "Surface polarity determination in (110)-orientated compound semiconductors by high-resolution electron microscopy",

abstract = "Several distinctive image features in principle enable the polarity of (110)-oriented compound semiconductors to be determined from high-resolution electron micrographs. In practice, knowledge of objective lens defocus and crystalthickness, and precise control of crystal and beam tilt, are generally required beforeunambiguous discrimination of crystal polarity is possible. Confirmation of surfacepolarity for a (1 x 1) reconstruction of a (110) CdTe surface observed by profileimaging is reported.",

author = "David Smith and Glaisher, {Rob W.} and Ping Lu",

note = "Funding Information: ACKNOWLEDGMENTS This work has been supported by National Science Foundation Grant No. DMR-",

year = "1989",

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AU - Glaisher, Rob W.

AU - Lu, Ping

N1 - Funding Information: ACKNOWLEDGMENTS This work has been supported by National Science Foundation Grant No. DMR-

PY - 1989/2

Y1 - 1989/2

N2 - Several distinctive image features in principle enable the polarity of (110)-oriented compound semiconductors to be determined from high-resolution electron micrographs. In practice, knowledge of objective lens defocus and crystalthickness, and precise control of crystal and beam tilt, are generally required beforeunambiguous discrimination of crystal polarity is possible. Confirmation of surfacepolarity for a (1 x 1) reconstruction of a (110) CdTe surface observed by profileimaging is reported.

AB - Several distinctive image features in principle enable the polarity of (110)-oriented compound semiconductors to be determined from high-resolution electron micrographs. In practice, knowledge of objective lens defocus and crystalthickness, and precise control of crystal and beam tilt, are generally required beforeunambiguous discrimination of crystal polarity is possible. Confirmation of surfacepolarity for a (1 x 1) reconstruction of a (110) CdTe surface observed by profileimaging is reported.

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Surface polarity determination in (110)-orientated compound semiconductors by high-resolution electron microscopy

Abstract

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