TY - JOUR
T1 - Surface morphology control of green LEDs with p-InGaN layers grown by metalorganic chemical vapor deposition
AU - Liu, Jianping
AU - Ryou, Jae Hyun
AU - Lochner, Zachary
AU - Limb, Jae
AU - Yoo, Dongwon
AU - Dupuis, Russell D.
AU - Wu, Zhihao
AU - Fischer, Alec M.
AU - Ponce, Fernando
N1 - Funding Information:
The authors thank US Department of Energy for the support of this work under Contract DE-FC26-03NT41946. They also thank SAFC Hitech Inc. for their support. RDD acknowledges the additional support of the Steve W. Chaddick Endowed Chair in Electro-Optics and Georgia Research Alliance.
PY - 2008/11/15
Y1 - 2008/11/15
N2 - The growth of green LEDs with InxGa1-xN:Mg p-type layers was studied by employing various epitaxial structures and substrates to control the surface morphology, especially in terms of the formation of pits. The pit densities of the green LED structures grown on sapphire substrates with p-type layers composed of a p-In0.04Ga0.96N:Mg and a graded p-InxGa1-xN:Mg are ∼1×109 and ∼3×108 cm-2, respectively. p-type layers composed of p-InGaN:Mg/p-GaN:Mg short-period superlattices are effective in preventing the formation of V-defect related pits. The pit density of green LED structures grown on free-standing GaN substrates with a p-In0.04Ga0.96N:Mg layer is ∼1.4×107 cm-2, which can be correlated to the threading dislocation density in the substrates.
AB - The growth of green LEDs with InxGa1-xN:Mg p-type layers was studied by employing various epitaxial structures and substrates to control the surface morphology, especially in terms of the formation of pits. The pit densities of the green LED structures grown on sapphire substrates with p-type layers composed of a p-In0.04Ga0.96N:Mg and a graded p-InxGa1-xN:Mg are ∼1×109 and ∼3×108 cm-2, respectively. p-type layers composed of p-InGaN:Mg/p-GaN:Mg short-period superlattices are effective in preventing the formation of V-defect related pits. The pit density of green LED structures grown on free-standing GaN substrates with a p-In0.04Ga0.96N:Mg layer is ∼1.4×107 cm-2, which can be correlated to the threading dislocation density in the substrates.
KW - A1. Crystal morphology
KW - A3. Metalorganic chemical vapor deposition
KW - B2. Semiconducting III-V materials
KW - B3. Light-emitting diodes
UR - http://www.scopus.com/inward/record.url?scp=56249088241&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=56249088241&partnerID=8YFLogxK
U2 - 10.1016/j.jcrysgro.2008.07.033
DO - 10.1016/j.jcrysgro.2008.07.033
M3 - Article
AN - SCOPUS:56249088241
SN - 0022-0248
VL - 310
SP - 5166
EP - 5169
JO - Journal of Crystal Growth
JF - Journal of Crystal Growth
IS - 23
ER -