Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1-xAs -based p-i-n semiconductor nanostructure

Kong-Thon Tsen; Juliann G. Kiang; D. K. Ferry; H. Morko̧

doi:10.1063/1.2420782

Subpicosecond time-resolved Raman studies of field-induced transient transport in an In_xGa_1-xAs -based p-i-n semiconductor nanostructure

Kong-Thon Tsen, Juliann G. Kiang, D. K. Ferry, H. Morko̧

Research output: Contribution to journal › Article › peer-review

3 Scopus citations

Abstract

Electron transient transport in an Inx Ga1-x As -based (x=0.53) p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale and at T=300 K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-n nanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.

Original language	English (US)
Article number	262101
Journal	Applied Physics Letters
Volume	89
Issue number	26
DOIs	https://doi.org/10.1063/1.2420782
State	Published - 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

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title = "Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1-xAs -based p-i-n semiconductor nanostructure",

abstract = "Electron transient transport in an Inx Ga1-x As -based (x=0.53) p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale and at T=300 K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-n nanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.",

author = "Kong-Thon Tsen and Kiang, {Juliann G.} and Ferry, {D. K.} and H. Mork{\c o}",

note = "Funding Information: This work is supported by the National Science Foundation under Grant No. DMR-0305147.",

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doi = "10.1063/1.2420782",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

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T1 - Subpicosecond time-resolved Raman studies of field-induced transient transport in an InxGa1-xAs -based p-i-n semiconductor nanostructure

AU - Tsen, Kong-Thon

AU - Kiang, Juliann G.

AU - Ferry, D. K.

AU - Morko̧, H.

N1 - Funding Information: This work is supported by the National Science Foundation under Grant No. DMR-0305147.

PY - 2006

Y1 - 2006

N2 - Electron transient transport in an Inx Ga1-x As -based (x=0.53) p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale and at T=300 K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-n nanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.

AB - Electron transient transport in an Inx Ga1-x As -based (x=0.53) p-i-n nanostructure under the application of an electric field has been studied by time-resolved Raman spectroscopy on a subpicosecond time scale and at T=300 K. The experimental results reveal the time evolution of the electron distribution function and electron drift velocity with subpicosecond time resolution. These experimental results are compared with those of both InP-based and GaAs-based p-i-n nanostructures and provide a consistent understanding and better insight of electron transient transport phenomena in semiconductors.

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Subpicosecond time-resolved Raman studies of field-induced transient transport in an In_xGa_1-xAs -based p-i-n semiconductor nanostructure

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