Abstract
Electron transport and phonon dynamics in a GaAs-based p-i-n nanostructure under the application of an electric field have been studied by time-resolved Raman spectroscopy at T = 80 K. The time-evolution of electron density, electron distribution, electron drift velocity, and LO phonon population has been directly measured with subpicosecond time resolution. Our experimental results show that, for a photoexcited electron-hole pair density of n ≅ 10 17cm -3, the effects of the drifting of electrons and electron intervalley scattering processes govern electron transport properties as well as the LO phonon dynamics. All of the experimental results are compared with ensemble Monte Carlo simulations and satisfatory agreement is obtained.
Original language | English (US) |
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Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
Editors | K.T. Tsen, H.R. Fetterman |
Pages | 292-303 |
Number of pages | 12 |
Volume | 3277 |
DOIs | |
State | Published - 1998 |
Event | Ultrafast Phenomena in Semiconductors II - San Jose, CA, United States Duration: Jan 28 1998 → Jan 29 1998 |
Other
Other | Ultrafast Phenomena in Semiconductors II |
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Country/Territory | United States |
City | San Jose, CA |
Period | 1/28/98 → 1/29/98 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics