Sub 250 nm deep-UV AlGaN/AlN distributed Bragg reflectors

Theeradetch Detchprohm, Yuh Shiuan Liu, Karan Mehta, Shuo Wang, Hongen Xie, Tsung Ting Kao, Shyh Chiang Shen, Paul D. Yoder, Fernando Ponce, Russell D. Dupuis

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29 Scopus citations


Deep-UV distributed Bragg reflectors (DBRs) operating at λ = 220-250 nm with reflectivity close to unity were produced using epitaxial AlxGa1-xN/AlN superlattice structures grown on AlN/sapphire templates via metalorganic chemical vapor deposition. Owing to the near-bandedge excitonic resonance in the AlxGa1-xN layers, the AlN mole fractions, x, were regulated to keep the reflective plateau within the enhanced refractive index contrast region between AlGaN and AlN of approximately 7%-11%. For DBRs incorporating high-index layers of AlGaN grown via a flow-rate modulated epitaxy technique, a reflectivity of 97% was achieved with a total pair number of 30.5 which was much smaller than number of pairs needed for the DBRs with conventionally grown AlGaN layers. The stopbands of these DBRs were about 6-9 nm.

Original languageEnglish (US)
Article number011105
JournalApplied Physics Letters
Issue number1
StatePublished - Jan 4 2017

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)


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