TY - GEN
T1 - Study of subthreshold electron mobility behavior in SOI - MESFETs
AU - Khan, T.
AU - Vasileska, Dragica
AU - Thornton, Trevor
PY - 2004/12/1
Y1 - 2004/12/1
N2 - The improvement in sub-threshold electron mobility behavior in SOI-MESFETs when compared to SOI and conventional MOSFET devices was investigated at Arizona State University. An in-house Ensemble Monte Carlo device simulator was used to perform extensive simulations of similar geometry SOI MOSFETs and Si MESFET channels. It was observed that in sub-threshold regime, the Schottky Junction Transistor (SJT) showed higher mobility with respect to bulk or SOI MOSFETs. The enhanced mobility in SOI MESFETs is expected to give rise to higher cut-off frequencies that will make them suitable for application in RF micropower circuit design.
AB - The improvement in sub-threshold electron mobility behavior in SOI-MESFETs when compared to SOI and conventional MOSFET devices was investigated at Arizona State University. An in-house Ensemble Monte Carlo device simulator was used to perform extensive simulations of similar geometry SOI MOSFETs and Si MESFET channels. It was observed that in sub-threshold regime, the Schottky Junction Transistor (SJT) showed higher mobility with respect to bulk or SOI MOSFETs. The enhanced mobility in SOI MESFETs is expected to give rise to higher cut-off frequencies that will make them suitable for application in RF micropower circuit design.
UR - http://www.scopus.com/inward/record.url?scp=18044399160&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=18044399160&partnerID=8YFLogxK
U2 - 10.1109/DRC.2004.1367783
DO - 10.1109/DRC.2004.1367783
M3 - Conference contribution
AN - SCOPUS:18044399160
SN - 0780382846
T3 - Device Research Conference - Conference Digest, DRC
SP - 61
EP - 62
BT - Device Research Conference - Conference Digest, 62nd DRC
T2 - Device Research Conference - Conference Digest, 62nd DRC
Y2 - 21 June 2004 through 23 June 2004
ER -