Studies of longitudinal optical phonons in GaN by subpicosecond timeresolved Raman Spectroscopy

Kong-Thon Tsen; Juliann G. Klang; D. K. Ferry; H. Morkoç

doi:10.1117/12.703696

Studies of longitudinal optical phonons in GaN by subpicosecond timeresolved Raman Spectroscopy

Kong-Thon Tsen, Juliann G. Klang, D. K. Ferry, H. Morkoç

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

The lifetime of longitudinal optical phonon mode in GaN has been measured by subpicosecond time-resolved Raman spectroscopy for photoexcited electron-hole pair density ranging from 10¹⁶cm^-3 to 2×10 ¹⁹cm^-3 and at T = 300K. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Possible mechanism for this observation has been discussed. Our experimental findings help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

Original language	English (US)
Title of host publication	Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
DOIs	https://doi.org/10.1117/12.703696
State	Published - 2007
Event	Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV - San Jose, CA, United States Duration: Jan 22 2007 → Jan 24 2007

Publication series

Name	Proceedings of SPIE - The International Society for Optical Engineering
Volume	6471
ISSN (Print)	0277-786X

Other

Other	Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV
Country/Territory	United States
City	San Jose, CA
Period	1/22/07 → 1/24/07

Keywords

GaN
Lifetime
Raman scattering
Time-resolved

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

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10.1117/12.703696

Cite this

Tsen, K.-T., Klang, J. G., Ferry, D. K., & Morkoç, H. (2007). Studies of longitudinal optical phonons in GaN by subpicosecond timeresolved Raman Spectroscopy. In Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV Article 64710X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6471). https://doi.org/10.1117/12.703696

Studies of longitudinal optical phonons in GaN by subpicosecond timeresolved Raman Spectroscopy. / Tsen, Kong-Thon; Klang, Juliann G.; Ferry, D. K. et al.
Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV. 2007. 64710X (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6471).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Tsen, K-T, Klang, JG, Ferry, DK & Morkoç, H 2007, Studies of longitudinal optical phonons in GaN by subpicosecond timeresolved Raman Spectroscopy. in Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV., 64710X, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, San Jose, CA, United States, 1/22/07. https://doi.org/10.1117/12.703696

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title = "Studies of longitudinal optical phonons in GaN by subpicosecond timeresolved Raman Spectroscopy",

abstract = "The lifetime of longitudinal optical phonon mode in GaN has been measured by subpicosecond time-resolved Raman spectroscopy for photoexcited electron-hole pair density ranging from 1016cm-3 to 2×10 19cm-3 and at T = 300K. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Possible mechanism for this observation has been discussed. Our experimental findings help resolve the recent controversy over the lifetime of LO phonon mode in GaN.",

keywords = "GaN, Lifetime, Raman scattering, Time-resolved",

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booktitle = "Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV",

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AU - Tsen, Kong-Thon

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PY - 2007

Y1 - 2007

N2 - The lifetime of longitudinal optical phonon mode in GaN has been measured by subpicosecond time-resolved Raman spectroscopy for photoexcited electron-hole pair density ranging from 1016cm-3 to 2×10 19cm-3 and at T = 300K. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Possible mechanism for this observation has been discussed. Our experimental findings help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

AB - The lifetime of longitudinal optical phonon mode in GaN has been measured by subpicosecond time-resolved Raman spectroscopy for photoexcited electron-hole pair density ranging from 1016cm-3 to 2×10 19cm-3 and at T = 300K. The lifetime has been found to decrease from 2.5 ps, at the lowest density to 0.35 ps, at the highest density. Possible mechanism for this observation has been discussed. Our experimental findings help resolve the recent controversy over the lifetime of LO phonon mode in GaN.

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KW - Time-resolved

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Studies of longitudinal optical phonons in GaN by subpicosecond timeresolved Raman Spectroscopy

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