Studies of carrier dynamics in InxGa1-xAs1-yNy by picosecond Raman spectroscopy

Y. Chen, Kong-Thon Tsen, D. K. Ferry

Research output: Contribution to journalArticlepeer-review


Non-equilibrium electron distributions and energy loss rate in a metal-organic chemical vapor deposition-grown InxGa1-xAs1-yNy (x = 0.03 and y = 0.01) epilayer on GaAs substrate have been studied by picosecond Raman spectroscopy. It is demonstrated that for electron density n≅1018 cm-3, electron distributions can be described very well by Fermi-Dirac distributions with electron temperatures substantially higher than the lattice temperature. From the measurement of electron temperature as a function of the pulse width of excitation laser, the energy loss rate in InxGa1-xAs1-yNy is estimated to be 64 meV/ps. These experimental results are compared with those of GaAs.

Original languageEnglish (US)
Pages (from-to)297-300
Number of pages4
JournalPhysica B: Condensed Matter
Issue number1-4
StatePublished - Mar 2002


  • InGaAsN
  • Raman spectroscopy

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering


Dive into the research topics of 'Studies of carrier dynamics in InxGa1-xAs1-yNy by picosecond Raman spectroscopy'. Together they form a unique fingerprint.

Cite this