TY - JOUR
T1 - Structural properties of heteroepitaxial germanium-carbon alloys grown on Si (100)
AU - Smith, David
AU - Todd, Michael
AU - Mcmurran, Jeffrey
AU - Kouvetakis, John
N1 - Funding Information:
ACKNOWLEDGEMENTS This work was supported by the National Science Foundation grant DMR-9458047. We acknowledge use of facilities at the Center for High Resolution Electron Microscopy at Arizona State University.
PY - 2001/6/1
Y1 - 2001/6/1
N2 - Heteroepitaxial films of Ge1-xCx(x < 7%) alloys have been grown on Si (100) substrates using ultrahigh-vacuum chemical vapour deposition reactions involving GeH4 and several different germylmethane precursors (GeH3)4-xCHx(x = 1-3), at temperatures in the range 470-540°C. The layer composition and crystallinity were assessed using Rutherford back-scattering spectroscopy, including C-resonance analysis, and the film microstructure was characterized using cross-sectional transmission electron microscopy. Irrespective of the particular germylmethane precursor used for deposition, alloys with low C concentrations had high crystallinity with low defect density, whereas those with high C content had an increased density of structural defects. Greater C incorporation generally led to films with flatter and smoother surfaces, implying that the addition of C had compensated strain due to lattice mismatch and promoted two-dimensional growth.
AB - Heteroepitaxial films of Ge1-xCx(x < 7%) alloys have been grown on Si (100) substrates using ultrahigh-vacuum chemical vapour deposition reactions involving GeH4 and several different germylmethane precursors (GeH3)4-xCHx(x = 1-3), at temperatures in the range 470-540°C. The layer composition and crystallinity were assessed using Rutherford back-scattering spectroscopy, including C-resonance analysis, and the film microstructure was characterized using cross-sectional transmission electron microscopy. Irrespective of the particular germylmethane precursor used for deposition, alloys with low C concentrations had high crystallinity with low defect density, whereas those with high C content had an increased density of structural defects. Greater C incorporation generally led to films with flatter and smoother surfaces, implying that the addition of C had compensated strain due to lattice mismatch and promoted two-dimensional growth.
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U2 - 10.1080/01418610108214365
DO - 10.1080/01418610108214365
M3 - Article
AN - SCOPUS:0035354599
SN - 0141-8610
VL - 81
SP - 1613
EP - 1624
JO - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
JF - Philosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
IS - 6
ER -