Structural properties of heteroepitaxial germanium-carbon alloys grown on Si (100)

David Smith, Michael Todd, Jeffrey Mcmurran, John Kouvetakis

Research output: Contribution to journalArticlepeer-review

4 Scopus citations


Heteroepitaxial films of Ge1-xCx(x < 7%) alloys have been grown on Si (100) substrates using ultrahigh-vacuum chemical vapour deposition reactions involving GeH4 and several different germylmethane precursors (GeH3)4-xCHx(x = 1-3), at temperatures in the range 470-540°C. The layer composition and crystallinity were assessed using Rutherford back-scattering spectroscopy, including C-resonance analysis, and the film microstructure was characterized using cross-sectional transmission electron microscopy. Irrespective of the particular germylmethane precursor used for deposition, alloys with low C concentrations had high crystallinity with low defect density, whereas those with high C content had an increased density of structural defects. Greater C incorporation generally led to films with flatter and smoother surfaces, implying that the addition of C had compensated strain due to lattice mismatch and promoted two-dimensional growth.

Original languageEnglish (US)
Pages (from-to)1613-1624
Number of pages12
JournalPhilosophical Magazine A: Physics of Condensed Matter, Structure, Defects and Mechanical Properties
Issue number6
StatePublished - Jun 1 2001

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • General Materials Science
  • Condensed Matter Physics
  • Physics and Astronomy (miscellaneous)
  • Metals and Alloys


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