Structural defect-related photoluminescence in GaN

L. Chen, Brian Skromme, M. K. Mikhov, H. Yamane, M. Aoki, F. J. DiSalvo, B. Wagner, R. F. Davis, P. A. Grudowski, R. D. Dupuis

Research output: Chapter in Book/Report/Conference proceedingConference contribution


Broad, low temperature photoluminescence (PL) peaks near 3.4-3.42 eV in GaN have previously been associated with basal-plane stacking faults. Recently, we observed unusually sharp and highly structured PL peaks in this region in high quality bulk GaN grown from a Na/Ga flux, some of which display characteristic shifts and narrowing as a function of excitation power. Here, we study these peaks as a function of excitation intensity and crystal polarity, and compare them to those observed in GaN grown on off-axis SiC or sapphire (0001) substrates by metalorganic chemical vapor deposition (MOCVD). In the off-axis material on either substrate, similar peaks are observed to those in the bulk samples. In addition, a low energy peak near 3.21 eV is observed, which does not occur in the bulk material.

Original languageEnglish (US)
Title of host publicationMaterials Research Society Symposium - Proceedings
EditorsH.M. Ng, M. Wraback, K. Hiramatsu, N. Grandjean
Number of pages6
StatePublished - 2003
EventGaN and Related Alloys - 2003 - Boston, MA, United States
Duration: Dec 1 2003Dec 5 2003


OtherGaN and Related Alloys - 2003
Country/TerritoryUnited States
CityBoston, MA

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials


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