Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

D. S. Jiang; L. F. Bian; X. G. Liang; K. Chang; B. Q. Sun; Shane Johnson; Yong-Hang Zhang

doi:10.1016/j.jcrysgro.2004.04.051

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

D. S. Jiang, L. F. Bian, X. G. Liang, K. Chang, B. Q. Sun, Shane Johnson, Yong-Hang Zhang

Research output: Contribution to journal › Conference article › peer-review

7 Scopus citations

Abstract

The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure.

Original language	English (US)
Pages (from-to)	336-341
Number of pages	6
Journal	Journal of Crystal Growth
Volume	268
Issue number	3-4 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.jcrysgro.2004.04.051
State	Published - Aug 1 2004
Event	ICMAT 2003, Symposium H, Compound Semiconductors in Electronic - Singapore, Singapore Duration: Dec 7 2003 → Dec 12 2004

Keywords

A3. Molecular beam epitaxy
A3. Quantum wells
B1. GaAsSb/GaAs

ASJC Scopus subject areas

Condensed Matter Physics
Inorganic Chemistry
Materials Chemistry

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10.1016/j.jcrysgro.2004.04.051

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title = "Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells",

abstract = "The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure.",

keywords = "A3. Molecular beam epitaxy, A3. Quantum wells, B1. GaAsSb/GaAs",

author = "Jiang, {D. S.} and Bian, {L. F.} and Liang, {X. G.} and K. Chang and Sun, {B. Q.} and Shane Johnson and Yong-Hang Zhang",

note = "Funding Information: This project is supported by National Natural Science Foundation of China with Grant No. 60276003, and partially by the National Science Foundation of USA (No. 0070125). ; ICMAT 2003, Symposium H, Compound Semiconductors in Electronic ; Conference date: 07-12-2003 Through 12-12-2004",

year = "2004",

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doi = "10.1016/j.jcrysgro.2004.04.051",

language = "English (US)",

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TY - JOUR

T1 - Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

AU - Jiang, D. S.

AU - Bian, L. F.

AU - Liang, X. G.

AU - Chang, K.

AU - Sun, B. Q.

AU - Johnson, Shane

AU - Zhang, Yong-Hang

N1 - Funding Information: This project is supported by National Natural Science Foundation of China with Grant No. 60276003, and partially by the National Science Foundation of USA (No. 0070125).

PY - 2004/8/1

Y1 - 2004/8/1

N2 - The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure.

AB - The structural and optical properties of MBE-grown GaAsSb/GaAs multiple quantum wells (MQWs) as well as strain-compensated GaAsSb/GaAs/GaAsP MQWs are investigated. The results of double crystal X-ray diffraction and reciprocal space mapping show that when strain-compensated layers are introduced, the interface quality of QW structure is remarkably improved, and the MQW structure containing GaAsSb layers with a high Sb composition can be coherently grown. Due to the influence of inserted GaAsP layers on the energy band and carrier distribution of QWs, the optical properties of GaAsSb/GaAs/GaAsP MQWs display a lot of features mainly characteristic of type-I QWs despite the type-II GaAsSb/GaAs interfaces exist in the structure.

KW - A3. Molecular beam epitaxy

KW - A3. Quantum wells

KW - B1. GaAsSb/GaAs

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U2 - 10.1016/j.jcrysgro.2004.04.051

DO - 10.1016/j.jcrysgro.2004.04.051

M3 - Conference article

AN - SCOPUS:3142750596

SN - 0022-0248

VL - 268

SP - 336

EP - 341

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 3-4 SPEC. ISS.

T2 - ICMAT 2003, Symposium H, Compound Semiconductors in Electronic

Y2 - 7 December 2003 through 12 December 2004

ER -

Structural and optical properties of GaAsSb/GaAs heterostructure quantum wells

Abstract

Keywords

ASJC Scopus subject areas

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